Jaehyeon Joo;Keun Woo Yang;Yeoung Je Choi;Byungwook Min;Chang Ouk Kim
{"title":"Virtual Metrology Modeling for Wafer Edges via Graph Attention Networks","authors":"Jaehyeon Joo;Keun Woo Yang;Yeoung Je Choi;Byungwook Min;Chang Ouk Kim","doi":"10.1109/TSM.2023.3284817","DOIUrl":null,"url":null,"abstract":"Quality monitoring is an essential element of defect detection in semiconductor manufacturing processes, but semiconductor companies use virtual metrology (VM) in addition to actual metrology to prevent productivity degradation due to the time and costs required to obtain measurements. Past VM studies aimed to predict average wafer measurement values via equipment sensor data and focused on achieving improved predictive performance by selecting or extracting important variables among high-dimensional variables such as equipment sensor data. However, the management of wafer chip quality requires not only average measurement values but also measurement value predictions for chips located at the edges, which are vulnerable to defects. In this paper, we therefore propose a graph attention (GAT) network-based VM model that predicts the measurement values of chips located at wafer edges by constructing graph data with measurement data (i.e., the measurement location information in wafers and the measurement values). To verify the performance of the proposed model, we conduct a comparative experiment with conventional machine learning methods. The experimental results show that the proposed VM model contributes to a predictive performance improvement in terms of the measurement values of chips located at wafer edges.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"36 3","pages":"359-366"},"PeriodicalIF":2.3000,"publicationDate":"2023-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Semiconductor Manufacturing","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10147904/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Quality monitoring is an essential element of defect detection in semiconductor manufacturing processes, but semiconductor companies use virtual metrology (VM) in addition to actual metrology to prevent productivity degradation due to the time and costs required to obtain measurements. Past VM studies aimed to predict average wafer measurement values via equipment sensor data and focused on achieving improved predictive performance by selecting or extracting important variables among high-dimensional variables such as equipment sensor data. However, the management of wafer chip quality requires not only average measurement values but also measurement value predictions for chips located at the edges, which are vulnerable to defects. In this paper, we therefore propose a graph attention (GAT) network-based VM model that predicts the measurement values of chips located at wafer edges by constructing graph data with measurement data (i.e., the measurement location information in wafers and the measurement values). To verify the performance of the proposed model, we conduct a comparative experiment with conventional machine learning methods. The experimental results show that the proposed VM model contributes to a predictive performance improvement in terms of the measurement values of chips located at wafer edges.
期刊介绍:
The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.