Novel Control Method and Applications for Negative Mode E-Beam Inspection

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Semiconductor Manufacturing Pub Date : 2023-06-09 DOI:10.1109/TSM.2023.3284367

Oliver D. Patterson;Datong Zhang;Ralf Buengener;Guanchen He;Yufei Duan;Joy Chu;Brian Sheumaker

引用次数: 0

Abstract

E-beam voltage contrast inspection is a very common method for in-line detection of many key defect types for rapid yield learning during technology development. Generally, the wafer surface is charged positive, but sometimes charging the wafer surface negative makes more sense. This paper reviews four advantages that negative charging may provide. Switching from positive to negative charging is typically achieved using landing energy and/or extraction voltage. A third control knob is introduced and demonstrated using three common inspection layers, contact chemical mechanical polish (CMP), 3D NAND wordline shorts and 3D NAND wordline opens.

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负模电子束检测的新控制方法及应用

电子束电压对比检测是在线检测许多关键缺陷类型的一种非常常用的方法，可以在技术开发过程中快速学习良率。一般情况下，晶圆表面带正电，但有时使晶圆表面带负电更有意义。本文综述了负电荷可能提供的四个优点。从正电荷到负电荷的转换通常使用着陆能量和/或提取电压来实现。介绍并演示了第三个控制旋钮，使用三个常见的检查层，接触化学机械抛光(CMP)， 3D NAND文字线缩短和3D NAND文字线打开。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Semiconductor Manufacturing 工程技术-工程：电子与电气

CiteScore

5.20

自引率

11.10%

发文量

101

审稿时长

3.3 months

期刊介绍： The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.