Erratum to “Landau–Khalatnikov-Based Modeling and Design Methodology for 1T-1FeFET Ferroelectric Neuron Oscillators”

IF 2.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Xiangkai Zeng;Zhao-Yi Yan;Houfang Liu;Haitao Liu;Ruiting Zhao;Dapeng Huang;Lin-Wang Wang;Yi Yang;Tian-Ling Ren
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引用次数: 0

Abstract

In the above article [1], several production/typesetting errors were introduced during the publication process. These errors do not affect the technical content, results, or conclusions of the article. The corrections are as follows. 1)On page 508, in Section I, an extraneous opening parenthesis was introduced before Ref. [15]. The affected text should read: “The Preisach model, for instance, effectively reproduces hysteresis loops but offers little insight into the microscopic mechanism of polarization switching or temporal polarization dynamics [15].”2)On page 510, in Section II-D, the gate-to-drain capacitance symbol was incorrectly typeset as $C_{gs}$ . The affected sentence: “...while the gate-to-drain capacitance $C_{gs}$ is neglected in phase-diagram analysis due to its relatively small contribution compared to $C_{gs}$ .” should be corrected to: “...while the gate-to-drain capacitance $C_{gd}$ is neglected in phase-diagram analysis due to its relatively small contribution compared to $C_{gs}$ .”3)On page 511, in Section IV, an extraneous character was introduced immediately before the integral sign in the energy-per-spike expression. The expression should read:\begin{equation*} E_{\mathrm {spike}}\approx \int V_{DD} I_{D}\left ({ t }\right) dt.\end{equation*} 4)On page 512, an unintended duplicate table was introduced. The table labeled Table 4, “Model Evaluation for Multi-Domain Case,” contains duplicated contentidentical to Table 5 and should be removed together with its caption. The current Table 5 should be numbered Table 4, and its caption should read: “Benchmark of 1T-1FeFET Neuron Model in This Work With Other Reported Solutions.”5)On page 513, in Section V, the braces enclosing the two arguments of the min operator were omitted. The expression should read:\begin{equation*} min\{\left |{ V_{DD}-V_{GF} }\right |, \vert V_{GF}-C_{MOS}^{-1}C_{gd}V_{DD}\vert \}\end{equation*} 6)On page 513, in Section V, an extraneous character was introduced immediately before the coefficient 2 in the approximation. The expression should read:\begin{equation*} V_{DD}\approx 2V_{GF}.\end{equation*} 7)On page 513, in Section VI, an additional dash was introduced in the notation for the current-voltage characteristic. The notation should read “ $I\!-\!V$ characteristic.”8)On page 515, in Appendix B, “Dimensional Consistency,” the exponents in the unit of the Landau coefficient $\beta $ were not rendered as superscripts. The unit should read $m^{5} \mathord {\left /{ \vphantom {m^{5} \left ({ F\cdot C^{2} }\right)}}\right.\hspace {-1.2pt} } \left ({ F\cdot C^{2} }\right)$ .
“基于landau - khalatnikov的1T-1FeFET铁电神经元振荡器的建模和设计方法”的更正
在上述文章[1]中,介绍了在出版过程中出现的几个生产/排版错误。这些错误不影响文章的技术内容、结果或结论。更正如下。1)在第508页的第一节中,在参考文献[15]之前引入了一个多余的左括号。受影响的文本应该是:“例如,Preisach模型有效地再现了磁滞回线,但对极化开关或时间极化动力学的微观机制几乎没有提供任何见解。”2)在第510页,第II-D节中,栅极-漏极电容符号被错误地排版为$C_{gs}$。做作的句子:“……虽然闸极漏极电容$C_{gs}$在相图分析中被忽略了,因为它与$C_{gs}$相比贡献相对较小。而闸极漏极电容$C_{gd}$在相图分析中被忽略,因为它的贡献相对较小,与$C_{gs}$相比。3)在第511页的第四节中,在每尖峰能量表达式的积分符号之前引入了一个无关的字符。表达式应该是:\begin{equation*} E_{\mathrm {spike}}\approx \int V_{DD} I_{D}\left ({ t }\right) dt.\end{equation*} 4)在第512页,无意中引入了一个重复的表。标记为表4的表,“多领域案例的模型评估”,包含了与表5重复的争议,应该连同它的标题一起删除。当前的表5应该编号为表4,其标题应该是:“1T-1FeFET神经元模型在本工作中的基准与其他报告的解决方案。”在第513页的第V节中,省略了包含min操作符的两个参数的大括号。表达式应该是:\begin{equation*} min\{\left |{ V_{DD}-V_{GF} }\right |, \vert V_{GF}-C_{MOS}^{-1}C_{gd}V_{DD}\vert \}\end{equation*} 6)在第513页的第五节中,在近似的系数2之前引入了一个无关的字符。表达式应该读作:\begin{equation*} V_{DD}\approx 2V_{GF}.\end{equation*} 7)在第513页,在第六节中,在表示电流-电压特性的符号中增加了一个破折号。符号应该读作“$I\!-\!V$ characteristic”。8)在附录B第515页“维度一致性”中,朗道系数$\beta $单位的指数没有以上标形式表示。单位应为$m^{5} \mathord {\left /{ \vphantom {m^{5} \left ({ F\cdot C^{2} }\right)}}\right.\hspace {-1.2pt} } \left ({ F\cdot C^{2} }\right)$。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology
CiteScore
5.20
自引率
4.30%
发文量
124
审稿时长
9 weeks
期刊介绍: The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
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