Instruction Error Detection With Bloom Filters: Architecture, Radiation Testing, and Fault Injection

IF 2.7 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Elijah Seth Cishugi;Tijmen T. Smit;Bruno Forlin;Carlo Cazzaniga;Kuan-Hsun Chen;Marco Ottavi
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引用次数: 0

Abstract

As memory cells continue to shrink in modern semiconductor technologies, radiation-induced Single Event Effects (SEEs), such as single- and multi-bit upsets, pose growing challenges to system reliability. While traditional error detection and correction approaches, such as Error Correcting Codes (ECC), are effective for single- and double-bit errors, they incur substantial overhead and complexity when scaled to detect multiple-bit errors. This study leverages the space-efficient and low-latency properties of Bloom Filters (BF) to create a lightweight, probabilistic instruction checker. We implement this checker within a stand-alone memory subsystem as well as directly into the instruction fetch path of the NEORV32 RISC-V soft-core and validate its performance using two separate neutron beam irradiation campaigns and complementary emulation-based fault injection campaigns. Experimental results from neutron beam tests and fault injection campaigns demonstrate the checker’s effectiveness in detecting single- and multi-bit errors, with measured detection rates near theoretical targets. Additionally, the integration of the BF-based checker into the NEORV32 soft core showcases its practical applicability in a microprocessor environment, maintaining high detection coverage even under multi-bit error conditions that degrade ECC reliability.
指令错误检测与布隆过滤器:架构,辐射测试,和故障注入
随着现代半导体技术中存储单元的不断缩小,辐射引起的单事件效应(SEEs),如单位和多位扰动,对系统可靠性提出了越来越大的挑战。虽然传统的错误检测和纠正方法,如纠错码(ECC),对单比特和双比特错误是有效的,但当扩展到检测多比特错误时,它们会产生大量的开销和复杂性。本研究利用布隆过滤器(BF)的空间效率和低延迟特性来创建一个轻量级的概率指令检查器。我们在一个独立的内存子系统中实现了这个检查器,也直接在NEORV32 RISC-V软核的指令获取路径中实现了这个检查器,并使用两个独立的中子束照射活动和互补的基于仿真的故障注入活动验证了它的性能。中子束测试和故障注入活动的实验结果表明,检查器在检测单比特和多比特错误方面是有效的,检测率接近理论目标。此外,将基于bf的检查器集成到NEORV32软核中,展示了其在微处理器环境中的实用性,即使在降低ECC可靠性的多比特错误条件下也能保持高检测覆盖率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability 工程技术-工程:电子与电气
CiteScore
4.80
自引率
5.00%
发文量
71
审稿时长
6-12 weeks
期刊介绍: The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
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