Elijah Seth Cishugi;Tijmen T. Smit;Bruno Forlin;Carlo Cazzaniga;Kuan-Hsun Chen;Marco Ottavi
{"title":"Instruction Error Detection With Bloom Filters: Architecture, Radiation Testing, and Fault Injection","authors":"Elijah Seth Cishugi;Tijmen T. Smit;Bruno Forlin;Carlo Cazzaniga;Kuan-Hsun Chen;Marco Ottavi","doi":"10.1109/TDMR.2026.3707731","DOIUrl":null,"url":null,"abstract":"As memory cells continue to shrink in modern semiconductor technologies, radiation-induced Single Event Effects (SEEs), such as single- and multi-bit upsets, pose growing challenges to system reliability. While traditional error detection and correction approaches, such as Error Correcting Codes (ECC), are effective for single- and double-bit errors, they incur substantial overhead and complexity when scaled to detect multiple-bit errors. This study leverages the space-efficient and low-latency properties of Bloom Filters (BF) to create a lightweight, probabilistic instruction checker. We implement this checker within a stand-alone memory subsystem as well as directly into the instruction fetch path of the NEORV32 RISC-V soft-core and validate its performance using two separate neutron beam irradiation campaigns and complementary emulation-based fault injection campaigns. Experimental results from neutron beam tests and fault injection campaigns demonstrate the checker’s effectiveness in detecting single- and multi-bit errors, with measured detection rates near theoretical targets. Additionally, the integration of the BF-based checker into the NEORV32 soft core showcases its practical applicability in a microprocessor environment, maintaining high detection coverage even under multi-bit error conditions that degrade ECC reliability.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"26 3","pages":"752-760"},"PeriodicalIF":2.7000,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Device and Materials Reliability","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11580390/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2026/6/26 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
As memory cells continue to shrink in modern semiconductor technologies, radiation-induced Single Event Effects (SEEs), such as single- and multi-bit upsets, pose growing challenges to system reliability. While traditional error detection and correction approaches, such as Error Correcting Codes (ECC), are effective for single- and double-bit errors, they incur substantial overhead and complexity when scaled to detect multiple-bit errors. This study leverages the space-efficient and low-latency properties of Bloom Filters (BF) to create a lightweight, probabilistic instruction checker. We implement this checker within a stand-alone memory subsystem as well as directly into the instruction fetch path of the NEORV32 RISC-V soft-core and validate its performance using two separate neutron beam irradiation campaigns and complementary emulation-based fault injection campaigns. Experimental results from neutron beam tests and fault injection campaigns demonstrate the checker’s effectiveness in detecting single- and multi-bit errors, with measured detection rates near theoretical targets. Additionally, the integration of the BF-based checker into the NEORV32 soft core showcases its practical applicability in a microprocessor environment, maintaining high detection coverage even under multi-bit error conditions that degrade ECC reliability.
期刊介绍:
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.