Influence of Short-Circuit Time on Short-Circuit Failure Modes of Planar Silicon Carbide MOSFETs

IF 2.7 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2026-09-01 Epub Date: 2024-12-05 DOI:10.1109/TDMR.2024.3503280

JiaHui Meng;Peng Sun;YuMeng Cai;HaoRan Zhang;Zhen Xin;ZhiBin Zhao

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引用次数: 0

Abstract

The short-circuit (SC) capability of silicon carbide (SiC) MOSFETs is weaker than that of silicon (Si) devices. Gate failure and thermal runaway failure are two typical SC failure modes and both failure mechanisms are related to temperature. In practical application, affected by SC protection action time, devices may fail during conduction or after turn-off, and it is of vital significance to investigate the impact of SC time (

$t_{\mathrm {sc}}$

) on failure modes. In this paper, a SC failure experimental platform is built. The failure modes of planar SiC MOSFETs from different manufactures under limited and unlimited

$t_{\mathrm {sc}}$

are investigated and divided more detailed. Results indicate that there are multiple failure modes for failures after turn-off affecting by limited

$t_{\mathrm {sc}}$

, while the devices from different manufactures have different SC failure modes during SC conduction period when

$t_{\mathrm {sc}}$

is unlimited. In addition, the characteristics of failures are more complex for planar SiC MOSFETs with negative off-state gate voltage. Moreover, the behavior of electrical quantities under different operating conditions is analyzed and the relationship between SC failure modes with different

$t_{\mathrm {sc}}$

is revealed with an improved Cauer thermal model. It is verified that

$t_{\mathrm {sc}}$

has an influence on the SC failure modes of planar SiC MOSFETs.

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短路时间对平面碳化硅mosfet短路失效模式的影响

碳化硅（SiC） mosfet的短路（SC）能力比硅（Si）器件弱。闸门破坏和热失控破坏是两种典型的SC破坏模式，这两种破坏机制都与温度有关。在实际应用中，受SC保护动作时间的影响，器件可能在导通过程中或关断后失效，研究SC时间（$t_{\ mathm {SC}}$）对失效模式的影响具有重要意义。本文搭建了SC破坏实验平台。研究了不同厂家的平面SiC mosfet在有限和无限的条件下的失效模式，并进行了详细的划分。结果表明：受有限的$t_{\mathrm {sc}}$影响，关断后失效存在多种失效模式，而当$t_{\mathrm {sc}}$不受限制时，不同厂家的器件在导通期间具有不同的失效模式。此外，负离态栅极电压的平面SiC mosfet的失效特征更为复杂。利用改进的Cauer热模型，分析了不同工况下的电学量的变化规律，揭示了SC失效模式与不同的$t_{\ mathm {SC}}$之间的关系。验证了$t_{\ mathm {sc}}$对平面SiC mosfet的sc失效模式有影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.