Synergistic Thin-Film Alignment and Surface Passivation for Anisotropic Charge Transport and Long-Term Stability in OFETs

IF 2.7 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2026-09-01 Epub Date: 2026-08-06 DOI:10.1109/TDMR.2026.3721283

Pritika Singh;Harshita Rai;Tejendra Dixit;Shyam S. Pandey;Vipul Singh

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引用次数: 0

Abstract

Organic field-effect transistors (OFETs) based on conjugated polymers are promising for flexible, low-cost electronics; however, their performance is often limited by interfacial trap states and disordered molecular packing. In this work, the combined influence of fabrication method (spin coating and UFTM), dielectric interface engineering (OTS and CYTOP), and molecular orientation on the charge transport characteristics of poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2)-based thin film transistors is systematically investigated. The UFTM process produces highly aligned polymer films, yielding pronounced optical anisotropy with a dichroic ratio of

$\sim ~6.5$

at an optimized annealing temperature of

$120~^{\circ }$

C. The optimized UFTM CYTOP

$(\|)$

device exhibits a maximum field-effect mobility of

$\sim 2.8\times 10^{-3}$

cm² V⁻¹ s⁻¹, an on/off current ratio of

$\sim ~4\times 10^{6}$

, improved threshold voltage, reduced subthreshold swing, excellent device-to-device reproducibility, while retaining

$\sim ~80$

% of its initial mobility after 60 days under ambient conditions. These findings demonstrate a simple, low-cost, and scalable fabrication strategy for improving the electrical performance and operational reliability of F8T2-based OFETs.

查看原文本刊更多论文

ofet中各向异性电荷输运和长期稳定性的协同薄膜取向和表面钝化

基于共轭聚合物的有机场效应晶体管（ofet）有望用于柔性、低成本的电子产品；然而，它们的性能往往受到界面陷阱状态和无序分子堆积的限制。本文系统地研究了制备方法（自旋镀膜和UFTM）、介电界面工程（OTS和CYTOP）和分子取向对聚9,9-二辛基芴-二噻吩（F8T2）薄膜晶体管电荷输运特性的综合影响。优化后的UFTM CYTOP $(\|)$器件的最大场效应迁移率为$\sim 2.8\ × 10^{-3}$ cm2 V−1 s−1，开/关电流比为$\sim ~4\ × 10^{6}$，提高了阈值电压，降低了亚阈值摆幅，具有优异的器件间可重复性。而在环境条件下60天后，其初始迁移率仍保持在80% ~ 80%。这些发现证明了一种简单、低成本、可扩展的制造策略，可以提高基于f8t2的ofet的电气性能和运行可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.