Nur Qalishah Adanan, Sichao Li, Syed Zulfiqar Hussain Shah, Durga Venkata Maheswar Repaka, Joel K. W. Yang, Iris Nandhakumar, Kedar Hippalgaonkar, Sunmi Shin, Robert E. Simpson, Pawan Kumar
{"title":"Enhanced Thermoelectric Performance of GeTe‐Sb 2 Te 3 Pseudo‐Binary Phase Change Material Through Stoichiometry Optimization","authors":"Nur Qalishah Adanan, Sichao Li, Syed Zulfiqar Hussain Shah, Durga Venkata Maheswar Repaka, Joel K. W. Yang, Iris Nandhakumar, Kedar Hippalgaonkar, Sunmi Shin, Robert E. Simpson, Pawan Kumar","doi":"10.1002/aelm.70609","DOIUrl":null,"url":null,"abstract":"Pseudo‐Binary GeTe‐Sb <jats:sub>2</jats:sub> Te <jats:sub>3</jats:sub> materials have demonstrated promising thermoelectric performance in intermediate temperature (500‐800 K) range. In this work, by co‐sputtering of Ge <jats:sub>45</jats:sub> Te <jats:sub>52</jats:sub> S <jats:sub>3</jats:sub> and Sb <jats:sub>2</jats:sub> Te <jats:sub>3</jats:sub> a composition spreads with varying Ge:Sb:Te ratios were fabricated to identify specific composition regimes with the highest thermoelectric performance. From the thermoelectric measurements, (Ge <jats:sub>5</jats:sub> Sb <jats:sub>37</jats:sub> Te <jats:sub>58</jats:sub> ) demonstrated the highest power factor values. Thermal conductivity measurements were performed on the different compositions with higher power factor values. Maximum <jats:italic>zT</jats:italic> values ranging from 0.36 ± 0.08 to 0.81 ± 0.15 for samples Ge <jats:sub>9</jats:sub> Sb <jats:sub>33</jats:sub> Te <jats:sub>58</jats:sub> to Ge <jats:sub>5</jats:sub> Sb <jats:sub>37</jats:sub> Te <jats:sub>58</jats:sub> at 300°C were achieved. The co‐sputtering technique establishes an effective high‐throughput approach to systematically map the relationship between composition and thermoelectric properties across a wide range of compositions in a single deposition run.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"53 1","pages":""},"PeriodicalIF":5.9000,"publicationDate":"2026-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.70609","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Pseudo‐Binary GeTe‐Sb 2 Te 3 materials have demonstrated promising thermoelectric performance in intermediate temperature (500‐800 K) range. In this work, by co‐sputtering of Ge 45 Te 52 S 3 and Sb 2 Te 3 a composition spreads with varying Ge:Sb:Te ratios were fabricated to identify specific composition regimes with the highest thermoelectric performance. From the thermoelectric measurements, (Ge 5 Sb 37 Te 58 ) demonstrated the highest power factor values. Thermal conductivity measurements were performed on the different compositions with higher power factor values. Maximum zT values ranging from 0.36 ± 0.08 to 0.81 ± 0.15 for samples Ge 9 Sb 33 Te 58 to Ge 5 Sb 37 Te 58 at 300°C were achieved. The co‐sputtering technique establishes an effective high‐throughput approach to systematically map the relationship between composition and thermoelectric properties across a wide range of compositions in a single deposition run.
期刊介绍:
Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.