Enhanced Thermoelectric Performance of GeTe‐Sb 2 Te 3 Pseudo‐Binary Phase Change Material Through Stoichiometry Optimization

IF 5.9 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Nur Qalishah Adanan, Sichao Li, Syed Zulfiqar Hussain Shah, Durga Venkata Maheswar Repaka, Joel K. W. Yang, Iris Nandhakumar, Kedar Hippalgaonkar, Sunmi Shin, Robert E. Simpson, Pawan Kumar
{"title":"Enhanced Thermoelectric Performance of GeTe‐Sb 2 Te 3 Pseudo‐Binary Phase Change Material Through Stoichiometry Optimization","authors":"Nur Qalishah Adanan, Sichao Li, Syed Zulfiqar Hussain Shah, Durga Venkata Maheswar Repaka, Joel K. W. Yang, Iris Nandhakumar, Kedar Hippalgaonkar, Sunmi Shin, Robert E. Simpson, Pawan Kumar","doi":"10.1002/aelm.70609","DOIUrl":null,"url":null,"abstract":"Pseudo‐Binary GeTe‐Sb <jats:sub>2</jats:sub> Te <jats:sub>3</jats:sub> materials have demonstrated promising thermoelectric performance in intermediate temperature (500‐800 K) range. In this work, by co‐sputtering of Ge <jats:sub>45</jats:sub> Te <jats:sub>52</jats:sub> S <jats:sub>3</jats:sub> and Sb <jats:sub>2</jats:sub> Te <jats:sub>3</jats:sub> a composition spreads with varying Ge:Sb:Te ratios were fabricated to identify specific composition regimes with the highest thermoelectric performance. From the thermoelectric measurements, (Ge <jats:sub>5</jats:sub> Sb <jats:sub>37</jats:sub> Te <jats:sub>58</jats:sub> ) demonstrated the highest power factor values. Thermal conductivity measurements were performed on the different compositions with higher power factor values. Maximum <jats:italic>zT</jats:italic> values ranging from 0.36 ± 0.08 to 0.81 ± 0.15 for samples Ge <jats:sub>9</jats:sub> Sb <jats:sub>33</jats:sub> Te <jats:sub>58</jats:sub> to Ge <jats:sub>5</jats:sub> Sb <jats:sub>37</jats:sub> Te <jats:sub>58</jats:sub> at 300°C were achieved. The co‐sputtering technique establishes an effective high‐throughput approach to systematically map the relationship between composition and thermoelectric properties across a wide range of compositions in a single deposition run.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"53 1","pages":""},"PeriodicalIF":5.9000,"publicationDate":"2026-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.70609","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Pseudo‐Binary GeTe‐Sb 2 Te 3 materials have demonstrated promising thermoelectric performance in intermediate temperature (500‐800 K) range. In this work, by co‐sputtering of Ge 45 Te 52 S 3 and Sb 2 Te 3 a composition spreads with varying Ge:Sb:Te ratios were fabricated to identify specific composition regimes with the highest thermoelectric performance. From the thermoelectric measurements, (Ge 5 Sb 37 Te 58 ) demonstrated the highest power factor values. Thermal conductivity measurements were performed on the different compositions with higher power factor values. Maximum zT values ranging from 0.36 ± 0.08 to 0.81 ± 0.15 for samples Ge 9 Sb 33 Te 58 to Ge 5 Sb 37 Te 58 at 300°C were achieved. The co‐sputtering technique establishes an effective high‐throughput approach to systematically map the relationship between composition and thermoelectric properties across a wide range of compositions in a single deposition run.
通过化学计量优化提高GeTe - sb2t3伪二元相变材料的热电性能
伪二元GeTe - sb2 - Te - 3材料在中温(500 - 800 K)范围内表现出了良好的热电性能。在这项工作中,通过共溅射Ge 45 Te 52 S 3和Sb 2 Te 3 a,制备了具有不同Ge:Sb:Te比例的复合镀层,以确定具有最高热电性能的特定组合体系。从热电测量中,(Ge 5 Sb 37 Te 58)显示出最高的功率因数值。对功率因数值较高的不同成分进行了导热系数测量。在300℃下,g9 Sb 33 Te 58 ~ g5 Sb 37 Te 58样品的zT最大值为0.36±0.08 ~ 0.81±0.15。共溅射技术建立了一种有效的高通量方法,可以在单次沉积中系统地绘制大范围成分与热电性能之间的关系。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信
小红书