MoS 2 Memristors Made by Liquid–Liquid Interface Assembly and Ultraprecise Metal Printing

IF 5.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2026-10-13 DOI:10.1002/aelm.70582

Miguel Franco, Daniel Neves, Dorina T. Papanastasiou, Jonas Deuermeier, Tomás Calmeiro, Tomás Mingates, Adam Kelly, Joseph Neilson, Eugénie Martinez, Zdeněk Sofer, Elvira Fortunato, Rodrigo Martins, Emanuel Carlos, Asal Kiazadeh

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引用次数: 0

Abstract

A cleanroom‐free process was developed for the fabrication of ultralow‐power resistive switching devices. Sub‐micron‐thick silver (Ag) electrodes are printed by XTPL's Ultraprecise Dispensing technology in a fully additive process. Two‐layer molybdenum disulfide (MoS 2 ) is used as the active layer, which was prepared and deposited by the Langmuir‐Schaefer technique. Devices with 30 × 30 µm 2 with volatile and non‐volatile operation were produced. These exhibit SET and RESET voltages of 0.32 ± 0.09 V and −0.29 ± 0.09 V, respectively, a memory window up to 10 6 , an endurance of 300 cycles achieved by voltage sweep, and stable operation under vacuum. The devices can retain the state for over 10 5 s. By employing high‐resolution printing techniques and an ultra‐conformable liquid‐based two‐dimensional materials deposition process, cost‐efficient and high‐performance resistive switching devices were fabricated for next‐generation computation and communication.

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液-液界面组装和超精密金属打印制造的MoS 2忆阻器

开发了一种制造超低功率电阻开关器件的无尘室工艺。亚微米厚的银（Ag）电极由XTPL的超精密点胶技术在全增材工艺中印刷。采用Langmuir - Schaefer技术制备两层二硫化钼（MoS 2）作为活性层。生产了具有易失性和非易失性操作的30 × 30µm2器件。这些器件的SET和RESET电压分别为0.32±0.09 V和- 0.29±0.09 V，记忆窗口高达10.6，电压扫描可实现300次循环，在真空下稳定工作。设备状态保持时间超过105s。通过采用高分辨率印刷技术和超符合的液体基二维材料沉积工艺，为下一代计算和通信制造了低成本和高性能的电阻开关器件。

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.