Mn-Substituted Topological Phase Transition in Topological Insulator Pt2HgSe3

IF 5.9 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Advanced Electronic Materials Pub Date : 2026-10-12 Epub Date: 2026-09-27 DOI:10.1002/aelm.70588
Deergh Bahadur Shahi, Gang Bahadur Acharya, Dipak Bhattarai, Bishnu Karki, Madhav Prasad Ghimire
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引用次数: 0

Abstract

Topological materials have gained a significant interest in recent years due to their unique features, leading to topological insulators (TI), Dirac or Weyl semimetals, etc. The layered material Pt 2 HgSe 3 ${\rm Pt}_2{\rm HgSe}_3$ is found to be a dual TI characterized by significant spin–orbit coupling and band inversion. We employ a density functional theory (DFT) approach to search a magnetic Weyl semimetal (WSM) by replacing Pt (I) with Mn in Pt 2 HgSe 3 ${\rm Pt}_2{\rm HgSe}_3$ . Here, Mn substitution introduces an exchange field, resulting time-reversal symmetry breaking by lifting spin degeneracy of bulk Dirac states in the band structure. Topological property calculation shows that Mn-substituted Pt 2 HgSe 3 ${\rm Pt}_2{\rm HgSe}_3$ is a magnetic WSM having 24 Weyl points close to the Fermi level. They are found to influence intrinsic anomalous Hall conductivity that rises up to ∼ $\sim$ 1100 S/cm around 0.8 eV and ∼ $\sim$ 280 S/cm at the Fermi level along easy magnetization axis [001]. Our study shows that substitution of a magnetic atom can play a significant role in tuning the electronic topology of Pt 2 HgSe 3 ${\rm Pt}_2{\rm HgSe}_3$ . We found that bulk Pt 2 HgSe 3 ${\rm Pt}_2{\rm HgSe}_3$ undergoes topological phase transition from TI to magnetic WSM. It is predicted that Mn-substituted Pt 2 HgSe 3 ${\rm Pt}_2{\rm HgSe}_3$ can be a promising candidate for high speed spintronics and electronics devices.

拓扑绝缘体Pt 2 HgSe 3中Mn取代的拓扑相变
近年来,拓扑材料由于其独特的特性而引起了人们的极大兴趣,导致拓扑绝缘体(TI),狄拉克或Weyl半金属等。层状材料为双TI,具有明显的自旋轨道耦合和能带反转。我们采用密度泛函理论(DFT)方法通过用Mn代替Pt (I)来搜索磁性Weyl半金属(WSM)。在这里,Mn取代引入了一个交换场,通过提高能带结构中体狄拉克态的自旋简并导致时间反转对称性破缺。拓扑性质计算表明,Mn‐取代的磁性WSM具有24个接近费米能级的Weyl点。研究发现,它们会影响本构异常霍尔电导率,在0.8 eV左右上升到1100 S/cm,沿易磁化轴在费米能级上升到280 S/cm[001]。我们的研究表明,磁性原子的取代可以在调整电子拓扑结构中发挥重要作用。我们发现,块体经历了从TI到磁性WSM的拓扑相变。预测Mn -取代可以成为高速自旋电子学和电子器件的有前途的候选材料。
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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