Unlocking the Top-Space Multi-Functionality of Thin-Film Acoustic Wave Devices

IF 4.6 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters Pub Date : 2026-10-01 Epub Date: 2026-08-14 DOI:10.1109/LED.2026.3723922
Shuhan Chen;Fangsheng Qian;Yansong Yang
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引用次数: 0

Abstract

Thin-film acoustic wave devices have substantially improved performance through bottom substrate-stack engineering, which leaves the vulnerability of interdigital transducers (IDTs) a critical challenge, especially under high-power excitation and top-space perturbations. By introducing cladding multilayers above the IDTs on a piezoelectric thin film, layered acoustic wave (LAW) devices with a symmetric acoustic-reflection structure provide strong vertical energy confinement and environmental isolation for the target modes. This architecture unlocks the top space above the IDTs for flexible functionalization. As a representative demonstration, this work presents a polymer-functionalized LAW prototype, showing that mature packaging pipelines can be simplified when inherently suppressing high-frequency, higher-order bulk wave spurious modes. With dispersion analysis and simulation, the low-acoustic-velocity and high-damping polymer is verified to be an effective medium for guiding and absorbing leaked bulk waves. The fabricated resonators provide dual functionality: spurious suppression and enhancement of the quality factor ( ${Q}\text {)}$ without degrading electromechanical coupling of the targeted mode. This work highlights the strong potential of versatile top-space stacking on LAW devices beyond conventional thin-film surface acoustic wave platforms.
揭开薄膜声波器件的顶层空间多功能
薄膜声波器件通过底部衬底堆叠工程大大提高了性能,这使得数字间换能器(idt)的脆弱性成为一个关键挑战,特别是在高功率激励和顶空间扰动下。通过在压电薄膜上的idt上引入包层多层,具有对称声反射结构的层状声波(LAW)器件为目标模式提供了强大的垂直能量约束和环境隔离。该体系结构解锁了idt上方的顶部空间,以实现灵活的功能。作为一个代表性的演示,本工作提出了一个聚合物功能化的LAW原型,表明成熟的封装管道可以在固有地抑制高频、高阶体波杂散模式时得到简化。通过色散分析和仿真,验证了低声速高阻尼聚合物是一种有效的引导和吸收泄漏体波的介质。制造的谐振器提供双重功能:抑制杂散和增强质量因子(${Q}\text{)}$,而不会降低目标模式的机电耦合。这项工作强调了在传统的薄膜表面声波平台之外,在LAW器件上实现多用途顶空间叠加的强大潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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