Enhanced 2Pr in 5-nm HZO Capacitors Under 300 °C RTP via Nb Electrode Engineering

IF 4.6 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2026-10-01 Epub Date: 2026-08-03 DOI:10.1109/LED.2026.3719105

Keyou Tong;Jing Xu;Xinyue Zhang;Wenjun Zhang;Weibing Liu;Shuai Yang;Xuanyi Li;Haisu Gao;Binbin Xu;Jiahan Yu;Wenjuan Xiong;Xiaoxue Ji;Jianhong Liu;Xiaolei Wang;Jun Luo

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引用次数: 0

Abstract

In this letter, Nb electrode engineering is proposed to enable low-temperature crystallization of ultrathin HZO, thereby extending its BEOL compatibility. Large

$2{P}_{\text {r}}$

values of 53.6/

$56.4~\mu $

C/cm² at 3/3.5 MV/cm are achieved by the positive-up-negative-down (PUND) method in 5-nm HZO with Nb electrodes (NHN) after

$300~^{\circ }$

C annealing, together with wake-up-free, negligible fatigue to 1E10 cycles (3 MV/cm, 100 kHz), and an extrapolated retention of 10 years at

$85~^{\circ }$

C. Specifically, the bottom Nb tends to form an Nb₂O₅ cap layer during the ALD process owing to its more negative oxide formation enthalpy, which suppresses oxygen scavenging and serves as an oxygen reservoir, thereby mitigating the redistribution and generation of interfacial oxygen vacancies (

${V}_{\text {O}}\text {)}$

. Meanwhile, the top Nb provides uniform nucleation sites due to the smaller Nb/HZO interfacial mismatch (~6%), promoting O-phase formation at ultra-low temperature. The synergy of above effects enables excellent ferroelectricity at a thermal budget as low as

$300~^{\circ }$

C, which is of great interest for BEOL-compatible FeRAM applications.

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通过Nb电极工程在300°C RTP下增强5nm HZO电容器的2Pr

在这封信中，提出了Nb电极工程来实现超薄HZO的低温结晶，从而扩展其BEOL兼容性。在$300~^{\circ}$ C退火后，采用正-上-负-下（PUND）方法，在3/3.5 MV/cm下获得了53.6/ $56.4~\mu $ C/cm2的大$2{P}_{\text {r}}$ $值，同时在$85~^{\circ}$ C退火后，在$300~^{\circ}$ C退火后，在$85~^{\circ}$ C下可以忽略疲劳（3 MV/cm, 100 kHz），并且在$85~^{\circ}$ C下可以外推保留10年。它抑制氧清除并充当氧库，从而减轻界面氧空位的再分配和产生（${V}_{\text {O}}\text{）}$。同时，由于Nb/HZO界面失配较小（~6%），顶部Nb提供了均匀的成核位点，促进了超低温下o相的形成。上述效应的协同作用可在低至$300~^{\circ}$ C的热预算下实现出色的铁电性，这对beol兼容FeRAM应用非常感兴趣。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.