Humidity-Modulated Flexible Chitosan-Based Memristor With Synaptic Behavior

IF 4.6 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2026-10-01 Epub Date: 2026-08-20 DOI:10.1109/LED.2026.3725255

Yiwen Chao;Yan Zhang;Ruipeng Wang;Yang Dai;Wu Zhao

{"title":"Humidity-Modulated Flexible Chitosan-Based Memristor With Synaptic Behavior","authors":"Yiwen Chao;Yan Zhang;Ruipeng Wang;Yang Dai;Wu Zhao","doi":"10.1109/LED.2026.3725255","DOIUrl":null,"url":null,"abstract":"A flexible Cu/Ti/chitosan:sodium chloride (CS:NaCl)/indium tin oxide (ITO)/polyimide (PI) memristor was evaluated at controlled relative humidity (RH) levels of 30% and 60% to investigate what RH-dependent changes occur in nonvolatile switching and short-term synaptic responses. Across five independently fabricated devices, the mean SET voltage (V<inline-formula> <tex-math>${}_{\\text {SET}}\\text {)}$ </tex-math></inline-formula> increased from <inline-formula> <tex-math>$2.128~\\pm ~0.046$ </tex-math></inline-formula> to <inline-formula> <tex-math>$3.152~\\pm ~0.046$ </tex-math></inline-formula> V, whereas the RESET voltage (V<inline-formula> <tex-math>${}_{\\text {RESET}}\\text {)}$ </tex-math></inline-formula> showed greater cycle-to-cycle and device-to-device variability. Higher RH enhanced the excitatory postsynaptic current, paired-pulse facilitation (PPF), and low-voltage conductance modulation. A 30%<inline-formula> <tex-math>$\\to 60$ </tex-math></inline-formula>%<inline-formula> <tex-math>$\\to 30$ </tex-math></inline-formula>% RH sequence showed a recovery trend in the SET voltage, and bipolar switching remained observable in all five devices after 200 bending cycles at R = 6 mm. Based on the measured conductance modulation, MNIST recognition exceeded 92% at both RH levels. Fusing I–V and PPF classifier outputs enabled proof-of-concept RH-state classification. These results reveal differentiated RH modulation of nonvolatile SET and short-term synaptic responses in a flexible chitosan-based memristor.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 10","pages":"2039-2042"},"PeriodicalIF":4.6000,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11660466/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2026/8/20 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

A flexible Cu/Ti/chitosan:sodium chloride (CS:NaCl)/indium tin oxide (ITO)/polyimide (PI) memristor was evaluated at controlled relative humidity (RH) levels of 30% and 60% to investigate what RH-dependent changes occur in nonvolatile switching and short-term synaptic responses. Across five independently fabricated devices, the mean SET voltage (V

${}_{\text {SET}}\text {)}$

increased from

$2.128~\pm ~0.046$

$3.152~\pm ~0.046$

V, whereas the RESET voltage (V

${}_{\text {RESET}}\text {)}$

showed greater cycle-to-cycle and device-to-device variability. Higher RH enhanced the excitatory postsynaptic current, paired-pulse facilitation (PPF), and low-voltage conductance modulation. A 30%

$\to 60$

$\to 30$

% RH sequence showed a recovery trend in the SET voltage, and bipolar switching remained observable in all five devices after 200 bending cycles at R = 6 mm. Based on the measured conductance modulation, MNIST recognition exceeded 92% at both RH levels. Fusing I–V and PPF classifier outputs enabled proof-of-concept RH-state classification. These results reveal differentiated RH modulation of nonvolatile SET and short-term synaptic responses in a flexible chitosan-based memristor.

查看原文本刊更多论文

具有突触行为的湿度调制柔性壳聚糖基忆阻器

研究了一种柔性Cu/Ti/壳聚糖：氯化钠(CS:NaCl)/氧化铟锡(ITO)/聚酰亚胺（PI）忆阻器在控制相对湿度（RH）水平为30%和60%时的非挥发性开关和短期突触反应的RH依赖性变化。在五个独立制造的器件中，平均SET电压（V ${}_{\text {SET}}\text{）}$从$2.128~\pm ~0.046$ V增加到$3.152~\pm ~0.046$ V，而RESET电压（V ${}_{\text {RESET}}\text{）}$显示出更大的周期到周期和器件到器件的可变性。较高的相对湿度增强了兴奋性突触后电流、配对脉冲促进（PPF）和低压电导调制。从30% $ $\到60$ $ % $ $\到30$ $ % RH的顺序显示出SET电压的恢复趋势，并且在R = 6 mm的200次弯曲循环后，在所有五个器件中仍然可以观察到双极开关。基于测量的电导调制，在两个相对湿度水平下，MNIST识别率都超过92%。融合I-V和PPF分类器输出实现了概念验证的rh状态分类。这些结果揭示了柔性壳聚糖基记忆电阻器中非易失性SET和短期突触反应的不同RH调节。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.