Porous 4H-SiC Local Avalanche Ultraviolet Photodetector With High Photo-to-Dark Current Ratio and Low Avalanche Threshold Voltage

IF 4.6 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2026-10-01 Epub Date: 2026-08-07 DOI:10.1109/LED.2026.3721503

Guanyang Zhang;Xiaojing Huyan;Tianxiang Zhao;Haolin Lei;Yongxun Liu;Shinan Wang;Lingyan Shen;Qiang Liu;Wenjie Yu

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Abstract

In this letter, a localized-avalanche strategy for ultraviolet detection based on electrochemically etched porous 4H-SiC with grid Schottky electrodes is demonstrated. Synergistic field enhancement from porous tips and electrode-edge crowding enables avalanche multiplication at ultralow reverse bias. The fabricated porous SiC avalanche photodiode (PSC-APD) achieves an avalanche onset of approximately 12 V, a responsivity of 413.6 A/W, and an external quantum efficiency (EQE) of 176,850% at 290 nm. At 50 V, the gain reaches

$4.8\times 10^{6}$

with a photo-to-dark current ratio (PDCR) of

$1.2\times 10^{5}$

. TCAD simulations and comparative experiments confirm that the ultralow-voltage avalanche arises from coupled field enhancement rather than individual structural effects. This work offers a simple, effective route to low-power, high-gain UV photodetectors based on wide-bandgap semiconductors.

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具有高光暗比和低雪崩阈值电压的多孔4H-SiC局部雪崩紫外探测器

在这封信中，展示了一种基于电化学蚀刻多孔4H-SiC网格肖特基电极的紫外检测的局部雪崩策略。多孔尖端和电极边缘拥挤的协同场增强使雪崩倍增在超低反向偏压下。制备的多孔SiC雪崩光电二极管（PSC-APD）在290 nm处实现了约12 V的雪崩起始，响应率为413.6 a /W，外量子效率（EQE）为176,850%。在50 V时，增益达到$4.8\乘以10^{6}$，光暗电流比（PDCR）为$1.2\乘以10^{6}$。TCAD仿真和对比实验证实了超低电压雪崩是由耦合场增强引起的，而不是由单个结构效应引起的。这项工作为基于宽带隙半导体的低功耗、高增益紫外光电探测器提供了一种简单、有效的途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.