Emittance-Limited Beam Radius of Pencil Beams in Terahertz Vacuum Electron Devices

IF 4.6 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters Pub Date : 2026-10-01 Epub Date: 2026-08-03 DOI:10.1109/LED.2026.3719330
Duo Xu;Shaomeng Wang;Zhanliang Wang;Zhigang Lu;Zhaoyun Duan;Yubin Gong
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Abstract

As vacuum electron devices (VEDs) push toward the terahertz band, the interaction-circuit beam tunnel must shrink with frequency, and the transverse dimension of the electron beam becomes increasingly affected by emittance. To estimate the minimum achievable beam radius (MABR) of pencil beams in terahertz VEDs, we perform numerical simulations of a 20-kV solenoid-confined pencil beam under idealized injection and focusing conditions, scanning magnetic field 0.3–0.8 T, normalized rms emittance 1–200 nm, and beam current 5–30 mA. Across the full scan, the MABR is a universal function of a single dimensionless space-charge-to-emittance ratio: it decreases from about 3.1 times the matched rms envelope radius in the emittance-dominated limit to about 2.2 times in the space-charge-dominated limit. In the emittance-dominated regime relevant to terahertz operation, the matched radius—and hence the MABR—is governed primarily by emittance and magnetic field rather than by beam current or voltage.
太赫兹真空电子器件中铅笔束的发射半径限制
随着真空电子器件(VEDs)向太赫兹波段推进,相互作用电路的电子束隧道必须随着频率的增加而缩小,电子束的横向尺寸越来越受发射度的影响。为了估计太赫兹VEDs中铅笔束的最小可实现束半径(MABR),我们在理想的注入和聚焦条件下,对20 kv螺线管约束的铅笔束进行了数值模拟,扫描磁场为0.3-0.8 T,归一化rms发射度为1-200 nm,束电流为5-30 mA。在整个扫描过程中,MABR是单维空间电荷-发射比的通用函数:它从发射主导极限下匹配均数包络半径的约3.1倍减小到空间电荷主导极限下的约2.2倍。在与太赫兹操作相关的发射主导状态下,匹配半径——因此也就是mabr——主要由发射率和磁场决定,而不是由波束电流或电压决定。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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