All-GaN Monolithic 2T1C-μLED Pixel With MHz Optical Modulation for High-Refresh-Rate Microdisplays

IF 4.6 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2026-10-01 Epub Date: 2026-08-03 DOI:10.1109/LED.2026.3718731

Ran Zhang;Hongping Liu;Yuefei Cai

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引用次数: 0

Abstract

High-refresh-rate active-matrix microdisplays are essential components for many high-end applications, such as augmented reality (AR) displays. In this work, an all-GaN monolithic active micro-light-emitting diode (

$\mu $

LED) pixel with optical modulation up to 2 MHz is demonstrated. The pixel consists of one

$20~\mu $

m-diameter

$\mu $

LED, two depletion-mode GaN high-electron-mobility transistors (HEMTs), and one metal-insulator-metal (MIM) storage capacitor (2T1C), with a total footprint of

$60~\mu $

$\times 60~\mu $

m. The GaN-based 2T1C-driven circuit is integrated monolithically with

$\mu $

LEDs formed via selective-area growth (SAG) without sidewall etching. Static performance of the 2T1C-

$\mu $

LED circuit has been tested under different

${V}_{\text {Data}}$

conditions. Transient measurements show its capability for “write-on, hold-on, write-off, and hold-off” operation, with both electrical and optical modulation up to 2 MHz, indicating great potential for high-end AR microdisplays.

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用于高刷新率微显示器的全氮化镓单片2T1C μ led像素与MHz光调制

高刷新率有源矩阵微显示器是许多高端应用的基本组件，例如增强现实（AR）显示器。在这项工作中，展示了光调制高达2 MHz的全氮化镓单片有源微发光二极管（$\mu $ LED）像素。该像素由一个直径20~\mu $ m的LED，两个耗尽模式GaN高电子迁移率晶体管（hemt）和一个金属-绝缘体-金属（MIM）存储电容器（2T1C）组成，总占地面积为60~\mu $ m × 60~\mu $ m。基于GaN的2T1C驱动电路与通过选择性面积生长（SAG）形成的$\mu $ LED单片集成，无需侧壁蚀刻。在不同的${V}_{\text {Data}}$条件下测试了2T1C- $\mu $ LED电路的静态性能。瞬态测量显示其具有“write-on, hold-on, write-off, hold-off”操作能力，电光调制高达2 MHz，表明高端AR微显示器的巨大潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.