Passivation Unlocks Enhanced Stability in BEOL-Compatible High-Voltage In2O3 Transistors for On-Chip Power Conversion

IF 4.6 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2026-10-01 Epub Date: 2026-08-12 DOI:10.1109/LED.2026.3722899

Jennifer Toy;Taikyu Kim;Jeong-Kyu Kim;Christian Papachristodoulou;Jimin Kang;H.-S. Philip Wong;Srabanti Chowdhury

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引用次数: 0

Abstract

This study demonstrates high voltage (HV), back-end-of-line (BEOL)-compatible, top-gate In₂O₃ transistors designed for scalable on-chip power converters in monolithic-3D (M3D) systems. 8-nm-thick In₂O₃ transistors exhibit current modulation ratio (

${I}_{\text {ON/ {OFF}}}\text {)} \gt 10^{{7}}$

, subthreshold swing (SS)

$\approx 108$

mV/dec, on-resistance (

${R}_{\text {ON}}\text {)} \approx 0.48 \Omega \cdot $

mm², and breakdown voltage (

${V}_{\text {BD}}\text {)} \approx 414$

V. While threshold voltage (

${V}_{\text {TH}}\text {)}$

remains stable under positive/negative bias temperature stress (PBTS/NBTS) even at

$85~^{\circ }$

C, the devices exhibit unconventional on-current (

${I}_{\text {ON}}\text {)}$

loss under NBTS and pronounced

${I}_{\text {ON}}$

collapse under hot carrier stress. These

${I}_{\text {ON}}$

degradations are greatly mitigated by passivating the access-region. This study reveals the dual-edged effect of the access region in HV oxide transistors in enabling high-voltage operation while triggering reliability penalties and establishes passivation as a practical route to mitigate

${I}_{\text {ON}}$

degradation.

查看原文本刊更多论文

钝化解锁增强稳定性的beol兼容的高电压In2O3晶体管片上电源转换

本研究展示了高压（HV），后端线（BEOL）兼容，顶栅In2O3晶体管设计用于单片3d （M3D）系统中的可扩展片上功率转换器。8纳米厚的In2O3晶体管表现出电流调制比（${I}_{\text {ON/ {OFF}}}\text {)} \gt 10^{{7}}$）、亚阈值摆幅（SS） $\approx 108$ mV/dec、导通电阻（${R}_{\text {ON}}\text {)} \approx 0.48 \Omega \cdot $ mm2）和击穿电压（${V}_{\text {BD}}\text {)} \approx 414$ v），而阈值电压（${V}_{\text {TH}}\text {)}$）在正/负偏置温度应力（PBTS/NBTS）下即使在$85~^{\circ }$ C也保持稳定。器件在NBTS下表现出非常规的导通电流（${I}_{\text {ON}}\text {)}$）损耗，在热载流子应力下表现出明显的${I}_{\text {ON}}$崩溃。通过钝化访问区域，大大减轻了这些${I}_{\text {ON}}$退化。本研究揭示了高压氧化物晶体管中接入区域的双刃剑效应，在实现高压工作的同时触发可靠性损失，并建立了钝化作为减轻${I}_{\text {ON}}$退化的实用途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.