Dresselhaus Spin-Orbit-Coupling-Based Spatial Electron-Spin Splitter in a Three-Layer Semiconductor Nanostructure

IF 4.6 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2026-10-01 Epub Date: 2026-08-26 DOI:10.1109/LED.2026.3725393

Ke-Yu Lu;Ya-Ping He;Li Zhang

引用次数: 0

Abstract

We explore Goos-Hänchen effect for electron beams in a Dresselhaus spin-orbit-coupling modulated three-layer semiconductor nanostructure. Due to the spin-related effective mass, the lateral shift is found to be spin-dependent, leading to spatial separation of spins and generation of electron spin polarization. The degree of spin polarization is revealed to be modifiable via the stain or layer thickness. Based on these findings, a spatial electron spin splitter is proposed for semiconductor spintronics.

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基于Dresselhaus自旋轨道耦合的三层半导体纳米结构空间电子自旋分离器

研究了电子束在Dresselhaus自旋轨道耦合调制三层半导体纳米结构中的Goos-Hänchen效应。由于自旋相关的有效质量，发现横向位移与自旋相关，导致自旋的空间分离和电子自旋极化的产生。自旋极化的程度可以通过染色或层厚来改变。在此基础上，提出了用于半导体自旋电子学的空间电子自旋分配器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.