Monolithic Integration of Mg-Free Trench-Gate MOSFETs and μLEDs

IF 4.6 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2026-10-01 Epub Date: 2026-08-20 DOI:10.1109/LED.2026.3724506

Yan Guo;Guokai Wang;Yugang Zhou;Dunjun Chen;Hai Lu;Bin Liu;Rong Zhang;Youdou Zheng

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引用次数: 0

Abstract

Driven by the rapid development of augmented reality (AR) and virtual reality (VR) displays, micro light-emitting diode (

$\mu $

LED) technology is evolving toward high brightness, high refresh rate, and high pixel density, which conventional driving and driving integration schemes can hardly meet. GaN-based monolithic drive-display integration is promising, yet existing schemes are limited by Mg doping-induced issues, poor process compatibility and high fabrication complexity. This work proposed and realized monolithically integrated Mg-free trench-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) and

$\mu $

LEDs, which deliver a specific on-resistance of ~15.4 m

$\Omega \cdot $

cm² and an on/off current ratio of

$\sim {5}\times {10} ^{{6}}$

, alongside turn-on/off delays of 300 ns/30 ns measured at 100 kHz. By replacing conventional Mg doping with polarization-induced doping, this approach offers high process compatibility and low fabrication complexity, paving a novel route for monolithic integration of GaN transistors and

$\mu $

LEDs.

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无镁沟栅mosfet和μ led的单片集成

在增强现实（AR）和虚拟现实（VR）显示技术快速发展的推动下，微发光二极管（$\mu $ LED）技术正朝着高亮度、高刷新率和高像素密度的方向发展，这是传统驱动和驱动集成方案难以满足的。基于氮化镓的单片驱动显示集成技术是一种很有前途的技术，但现有的方案受到镁掺杂问题、工艺兼容性差和制造复杂性的限制。这项工作提出并实现了单片集成的无镁沟槽栅金属氧化物半导体场效应晶体管（mosfet）和$\mu $ led，其特定导通电阻为15.4 m $\Omega \cdot $ cm2，通/关电流比为$\sim {5}\times {10} ^{{6}}$，在100 kHz下测量的通/关延迟为300 ns/30 ns。通过用极化诱导掺杂取代传统的Mg掺杂，该方法具有高工艺兼容性和低制造复杂性，为GaN晶体管和$\mu $ led的单片集成铺平了新的道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.