E. Miranda;A. Cantudo;F. Jiménez-Molinos;J. Suñé;M. B. González;J. B. Roldán
{"title":"Intermittency and Persistence of Switching Modes in HfO2-Based Memristors","authors":"E. Miranda;A. Cantudo;F. Jiménez-Molinos;J. Suñé;M. B. González;J. B. Roldán","doi":"10.1109/LED.2026.3719434","DOIUrl":null,"url":null,"abstract":"A distinct form of variability in HfO<sub>2</sub>-based memristive devices is experimentally identified and analyzed. Unlike conventional cycle-to-cycle (C2C) variability, which is commonly associated with fluctuations within a single switching mechanism, the observed behaviour originates from the intermittent coexistence of well-distinguishable conduction modes. The devices exhibit spontaneous transitions between bipolar resistive switching (BRS) and complementary resistive switching (CRS), giving rise to persistent conduction states interrupted by abrupt mode changes. Statistical analysis based on the Wald-Wolfowitz runs test reveals statistically significant temporal correlations, indicating that the switching dynamics cannot be described as a purely random process. The voltage ramp rate is found to strongly influence the relative occurrence of both modes, progressively suppressing the CRS response until only the BRS mode remains observable at sufficiently high ramp rates. Numerical simulations based on the dynamic memdiode model reproduce the experimentally observed mode-switching behaviour and attribute its origin to the partial reconfiguration of the conductive filament. These results establish intermittency and persistence as key descriptors of conduction-mode variability in resistive switching dielectrics, revealing a form of variability that extends beyond conventional C2C fluctuations.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"47 10","pages":"2119-2122"},"PeriodicalIF":4.6000,"publicationDate":"2026-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11644051","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11644051/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2026/8/6 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
A distinct form of variability in HfO2-based memristive devices is experimentally identified and analyzed. Unlike conventional cycle-to-cycle (C2C) variability, which is commonly associated with fluctuations within a single switching mechanism, the observed behaviour originates from the intermittent coexistence of well-distinguishable conduction modes. The devices exhibit spontaneous transitions between bipolar resistive switching (BRS) and complementary resistive switching (CRS), giving rise to persistent conduction states interrupted by abrupt mode changes. Statistical analysis based on the Wald-Wolfowitz runs test reveals statistically significant temporal correlations, indicating that the switching dynamics cannot be described as a purely random process. The voltage ramp rate is found to strongly influence the relative occurrence of both modes, progressively suppressing the CRS response until only the BRS mode remains observable at sufficiently high ramp rates. Numerical simulations based on the dynamic memdiode model reproduce the experimentally observed mode-switching behaviour and attribute its origin to the partial reconfiguration of the conductive filament. These results establish intermittency and persistence as key descriptors of conduction-mode variability in resistive switching dielectrics, revealing a form of variability that extends beyond conventional C2C fluctuations.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.