Intermittency and Persistence of Switching Modes in HfO2-Based Memristors

IF 4.6 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters Pub Date : 2026-10-01 Epub Date: 2026-08-06 DOI:10.1109/LED.2026.3719434
E. Miranda;A. Cantudo;F. Jiménez-Molinos;J. Suñé;M. B. González;J. B. Roldán
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引用次数: 0

Abstract

A distinct form of variability in HfO2-based memristive devices is experimentally identified and analyzed. Unlike conventional cycle-to-cycle (C2C) variability, which is commonly associated with fluctuations within a single switching mechanism, the observed behaviour originates from the intermittent coexistence of well-distinguishable conduction modes. The devices exhibit spontaneous transitions between bipolar resistive switching (BRS) and complementary resistive switching (CRS), giving rise to persistent conduction states interrupted by abrupt mode changes. Statistical analysis based on the Wald-Wolfowitz runs test reveals statistically significant temporal correlations, indicating that the switching dynamics cannot be described as a purely random process. The voltage ramp rate is found to strongly influence the relative occurrence of both modes, progressively suppressing the CRS response until only the BRS mode remains observable at sufficiently high ramp rates. Numerical simulations based on the dynamic memdiode model reproduce the experimentally observed mode-switching behaviour and attribute its origin to the partial reconfiguration of the conductive filament. These results establish intermittency and persistence as key descriptors of conduction-mode variability in resistive switching dielectrics, revealing a form of variability that extends beyond conventional C2C fluctuations.
基于hfo2的忆阻器开关模式的间歇性和持久性
一种不同形式的可变性在hfo2为基础的记忆器件实验鉴定和分析。与通常与单一开关机制内的波动相关的常规周期到周期(C2C)变异性不同,观察到的行为源于易于区分的传导模式的间歇性共存。该器件表现出双极电阻开关(BRS)和互补电阻开关(CRS)之间的自发转换,产生持久的传导状态,被突然的模式变化中断。基于Wald-Wolfowitz运行检验的统计分析揭示了统计上显著的时间相关性,表明切换动态不能被描述为纯粹的随机过程。发现电压斜坡率强烈影响两种模式的相对发生,逐渐抑制CRS响应,直到只有BRS模式在足够高的斜坡率下仍然可以观察到。基于动态memdiode模型的数值模拟再现了实验观察到的模式切换行为,并将其归因于导电灯丝的部分重构。这些结果确立了间歇性和持续性是电阻开关电介质中传导模式可变性的关键描述符,揭示了一种超越传统C2C波动的可变性形式。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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