Performance Enhancement of IGZO Thin-Film Transistors by Ultrathin Te Back-Channel Heterojunction Capping

IF 4.6 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2026-10-01 Epub Date: 2026-09-02 DOI:10.1109/LED.2026.3724062

Kai-Jhih Gan;Chong Ma;Zefu Zhao;Jialong Xiang;Tiaoyang Li;Shaohao Wang;Dun-Bao Ruan

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引用次数: 0

Abstract

Ultrathin p-type capping layers were introduced to modulate the back-channel surface of IGZO thin-film transistors (TFTs). Among Te, NiO_x, and SnO_x capping layers, the Te-capped IGZO TFT exhibits the best balanced performance, with a subthreshold swing (SS) of 67.1 mV/dec, a field-effect mobility (

$\mu _{\text {FE}}\text {)}$

of 25.6 cm²/V

$\cdot $

s, an on/off current (I_on/

$\mathrm{I}_{\text {off}}\text {)}$

ratio of

${1}.{06}\times {10} ^{{9}}$

, and a threshold voltage (

$\mathrm{V}_{\text {TH}}\text {)}$

of −0.035 V. Compared with the control device, Te capping reduces SS by 63%, enhances

$\mu _{\text {FE}}$

by 43%, and shifts V_TH positively by 0.945 V. The I_on/I_off ratio also increases by 49.3 times. The 2-nm Te layer therefore enables simultaneous improvement in switching steepness, carrier transport, and V_TH control through back-channel modulation.

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超薄Te背道异质结封盖提高IGZO薄膜晶体管性能

采用超薄p型封盖层对IGZO薄膜晶体管（TFTs）的后通道表面进行调制。在Te、NiOx和SnOx封盖层中，Te封盖的IGZO TFT表现出最佳的平衡性能，亚阈值摆幅（SS）为67.1 mV/dec，场效应迁移率（$\mu _{\text {FE}}\text{）}$为25.6 cm2/V $\cdot $ s，通/关电流（Ion/ $\mathrm{I}_{\text {off}}}\text{）}$比值为${1}。{10}{06} \倍^{{9}},美元和一个阈值电压($ \ mathrm {V} _{\文本{TH}} \文本{)}$−0.035 V。与对照装置相比，该封顶装置使SS降低63%，使$\mu _{\text {FE}}$提高43%，使VTH正偏移0.945 V。离子/离合比也提高了49.3倍。因此，通过反向信道调制，2nm Te层可以同时改善开关陡峭度、载流子传输和VTH控制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.