Deep-Ultraviolet-Coupled Floating-Gate Phototransistor for In-Sensor Visual Computing

IF 4.6 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Electron Device Letters Pub Date : 2026-10-01 Epub Date: 2026-08-06 DOI:10.1109/LED.2026.3718946
Yezhao Zhuang;Jianlin Shi;Xiang Li;Ting Li;Yizihan Zhang;Zhipeng Zhong;Wan Wang;Yan Li;Hai Huang;Jianlu Wang;Junhao Chu
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引用次数: 0

Abstract

Deep ultraviolet (DUV) in-sensor computing requires direct coupling between ultraviolet sensing and device-level weight updating. Floating-gate phototransistors provide an attractive platform for integrating sensing, memory, and computing. However, optical stimuli typically induce conductance potentiation, while conductance depression still relies on electrical programming, resulting in incomplete coupling between optical sensing and synaptic weight updating and introducing additional electrical programming overhead. Here, we demonstrate a MoS2/hBN/graphene floating-gate DUV phototransistor for in-sensor computing. The device exhibits ultraviolet-selective photoresponse and stable floating-gate memory behavior. Under 254 nm illumination, controllable long-term potentiation (LTP) is achieved through photo-assisted floating-gate charge modulation. More importantly, synchronized DUV illumination and low-voltage gate pulses (8 V) enable efficient long-term depression (LTD), allowing ultraviolet inputs to participate in bidirectional weight updating. The device achieves 64 conductance states for both potentiation and depression, corresponding to 6-bit weight modulation. A convolutional neural network based on the measured device characteristics achieves over 91% accuracy in fingerprint recognition. These results demonstrate a feasible route toward DUV-coupled in-sensor visual computing.
用于传感器内视觉计算的深紫外耦合浮栅光电晶体管
深紫外(DUV)传感器内计算需要紫外传感和设备级权重更新之间的直接耦合。浮栅光电晶体管为集成传感、存储和计算提供了一个有吸引力的平台。然而,光刺激通常会诱导电导增强,而电导抑制仍然依赖于电编程,导致光传感与突触权更新之间的不完全耦合,并引入额外的电编程开销。在这里,我们展示了用于传感器内计算的MoS2/hBN/石墨烯浮栅DUV光电晶体管。该器件具有紫外选择性光响应和稳定的浮栅记忆性能。在254 nm光照下,通过光辅助浮栅电荷调制实现了可控的长期增强(LTP)。更重要的是,同步的DUV照明和低压门脉冲(8v)实现了有效的长期抑制(LTD),允许紫外线输入参与双向权重更新。该器件实现64个电导状态,用于增强和抑制,对应于6位重量调制。基于被测设备特性的卷积神经网络在指纹识别中的准确率达到91%以上。这些结果为duv耦合传感器内视觉计算提供了一条可行的途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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