Equivalent Circuit Modeling of RF Degradation in TSVs for Millimeter-Wave Applications

IF 3.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2026-09-01 Epub Date: 2026-07-27 DOI:10.1109/TCPMT.2026.3717167

Yong Wang;Minglong Wu;Kun He;Yue Tang;Jun Xing;Fengyi Huang;Yuehang Xu;Xusheng Tang;Huanpeng Wang

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引用次数: 0

Abstract

Compared with numerical methods, the equivalent circuit method offers advantages in simulation speed and ease of implementation in commercial radio frequency (RF) electronic design automation (EDA) tools. This letter presents, for the first time, an RF degradation equivalent circuit model (ECM) for through-silicon vias (TSVs) that quantitatively characterizes their performance degradation. The proposed approach is validated through thermal shock stress testing. By integrating the Coffin–Manson reliability model into a degradation-sensitive TSV ECM, the model accurately predicts the evolution of RF performance under thermal loading. The experimental results based on thermal shock tests from

$- 70~^{\circ }$

C to

$200~^{\circ }$

C show excellent agreement between the simulated and measured S-parameters from 0.1 to 40 GHz, with accuracy exceeding 92%. The proposed model is suitable for millimeter-wave reliability assessment, particularly in advanced packaging applications.

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毫米波应用中tsv射频衰减的等效电路建模

与数值方法相比，等效电路方法在商用射频（RF）电子设计自动化（EDA）工具中具有仿真速度快、易于实现的优点。本文首次提出了硅通孔（tsv）的射频退化等效电路模型（ECM），该模型定量表征了其性能退化。通过热冲击应力测试验证了该方法的有效性。通过将Coffin-Manson可靠性模型集成到退化敏感的TSV ECM中，该模型准确地预测了热载荷下射频性能的演变。在$- 70~ $ {\circ}$ C至$200~ $ {\circ}$ C范围内进行的热冲击试验结果表明，在0.1 ~ 40 GHz范围内，模拟s参数与实测s参数吻合良好，精度超过92%。该模型适用于毫米波可靠性评估，特别是在先进封装应用中。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Components, Packaging and Manufacturing Technology ENGINEERING, MANUFACTURING-ENGINEERING, ELECTRICAL & ELECTRONIC

CiteScore

4.70

自引率

13.60%

发文量

203

审稿时长

3 months

期刊介绍： IEEE Transactions on Components, Packaging, and Manufacturing Technology publishes research and application articles on modeling, design, building blocks, technical infrastructure, and analysis underpinning electronic, photonic and MEMS packaging, in addition to new developments in passive components, electrical contacts and connectors, thermal management, and device reliability; as well as the manufacture of electronics parts and assemblies, with broad coverage of design, factory modeling, assembly methods, quality, product robustness, and design-for-environment.