{"title":"Design and Fabrication of a 7-GHz Bandpass Filter Based on Solidly Mounted A1-Mode LiNbO3 XBAR With Dielectric Bragg Reflectors","authors":"Zishuo Zhang;Rui Ding;Junye Lin;Mingyu Chen;Long Chen;Peng Zheng;Sulei Fu;Shurong Dong;Jikui Luo;Weipeng Xuan","doi":"10.1109/TED.2026.3714380","DOIUrl":null,"url":null,"abstract":"Achieving both strong acoustic confinement and wafer-level manufacturability remains a key challenge for A1-mode laterally excited bulk acoustic wave resonators (XBARs), particularly for conventional suspended structures requiring membrane release. This work presents a solidly mounted XBAR (SM-XBAR) based on a 128° Y-cut LiNbO3 thin film and an asymmetrically optimized SiO2/Ta2O5 Bragg reflector for suppressing substrate-side acoustic leakage. A finite-element model considering the dispersive characteristics of A1 Lamb waves is employed to optimize the reflector structure, resulting in a broadband acoustic stopband covering 6–9 GHz. The optimized reflector improves the series quality factor <inline-formula> <tex-math>${Q}_{s}$ </tex-math></inline-formula> from 100 to 575 and the parallel quality factor <inline-formula> <tex-math>${Q}_{p}$ </tex-math></inline-formula> from 185 to 650 while preserving effective electromechanical coupling coefficient <inline-formula> <tex-math>${k}_{\\textit {eff}}^{{2}} \\gt 17$ </tex-math></inline-formula>%. To validate practical applicability, a fourth-order ladder filter is implemented, achieving a center frequency of 6.74 GHz, a 10% fractional bandwidth (FBW), and more than 40-dB out-of-band rejection. The proposed solidly mounted architecture eliminates membrane release and provides a manufacturable and mechanically robust solution for sub-8-GHz RF filtering applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 9","pages":"5830-5837"},"PeriodicalIF":3.6000,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11641293/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2026/8/4 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Achieving both strong acoustic confinement and wafer-level manufacturability remains a key challenge for A1-mode laterally excited bulk acoustic wave resonators (XBARs), particularly for conventional suspended structures requiring membrane release. This work presents a solidly mounted XBAR (SM-XBAR) based on a 128° Y-cut LiNbO3 thin film and an asymmetrically optimized SiO2/Ta2O5 Bragg reflector for suppressing substrate-side acoustic leakage. A finite-element model considering the dispersive characteristics of A1 Lamb waves is employed to optimize the reflector structure, resulting in a broadband acoustic stopband covering 6–9 GHz. The optimized reflector improves the series quality factor ${Q}_{s}$ from 100 to 575 and the parallel quality factor ${Q}_{p}$ from 185 to 650 while preserving effective electromechanical coupling coefficient ${k}_{\textit {eff}}^{{2}} \gt 17$ %. To validate practical applicability, a fourth-order ladder filter is implemented, achieving a center frequency of 6.74 GHz, a 10% fractional bandwidth (FBW), and more than 40-dB out-of-band rejection. The proposed solidly mounted architecture eliminates membrane release and provides a manufacturable and mechanically robust solution for sub-8-GHz RF filtering applications.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.