2.7-kV Ga2O3 Vertical Schottky Barrier Diode With Photo-Dielectric Field-Plate

IF 3.6 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2026-09-01 Epub Date: 2026-07-24 DOI:10.1109/TED.2026.3715153

Nafis Imtiaz Rahman;Ke Zeng

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引用次数: 0

Abstract

In this article, we report a systematic experimental study of Ga2O3 Schottky barrier diodes (SBDs) with a novel photo-dielectric (PD) field-plate (FP) process featuring a significantly simplified fabrication procedure that can produce high-performance diodes that are comparable with chemical-vapor-deposited field-plated diodes. The effects of different FP dielectric thickness and designs were investigated on both single FP and double FP diodes. The double FP diode achieved an on-resistance (

${R}_{\textit {on},\textit {sp}}\text {)}$

of 7.5 m

$\Omega \cdot $

cm2, with a breakdown voltage (

${V}_{\textit {br}}\text {)}$

of 2.78 kV, and a 1.04 GW/cm2 power-figure-of-merit (PFOM), without any substrate etching or hetero-integration. The liquid packaging effect was investigated by comparing breakdown voltages (

${V}_{\textit {br}}\text {)}$

measured under two types of dielectric liquid immersion, indicating that the highest

${V}_{\textit {br}}$

observed in these experiments is likely extrinsic and packaging-limited.

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具有光介电场板的2.7 kv Ga2O3垂直肖特基势垒二极管

在本文中，我们报告了Ga2O3肖特基势垒二极管（sdd）的系统实验研究，该实验采用了一种新型光介电场板（PD）工艺，该工艺具有显著简化的制造过程，可以生产出与化学气相沉积场镀二极管相当的高性能二极管。研究了不同介电厚度和设计对单、双FP二极管的影响。双FP二极管的导通电阻（${R}_{\textit {on},\textit {sp}}\text{）}$为7.5 m $\Omega \cdot $ cm2，击穿电压（${V}_{\textit {br}}\text{）}$为2.78 kV，功率优值（PFOM）为1.04 GW/cm2，没有衬底蚀刻或异质集成。通过比较两种介质液体浸泡下的击穿电压（${V}_{\textit {br}}}\text{）}$，研究了液体封装效应，表明在这些实验中观察到的最高${V}_{\textit {br}}$可能是外在的和封装限制的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.