Highly Sensitive MAPbBr3 Single Crystal Photodetector by Surface Reconstruction

IF 3.6 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices Pub Date : 2026-09-01 Epub Date: 2026-07-30 DOI:10.1109/TED.2026.3716666
Yuangan Chen;Zujian Dai;Haolan Xu;Lijuan Huang;Mingzhu Hu;Lixin He;Yongqiang Yu;Qin Hu
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引用次数: 0

Abstract

MAPbBr3 single crystals (SCs) have attracted significant attention due to their low defect density and excellent optoelectronic properties. However, residual solvents introduced during solution-based SC synthesis increase defects and surface roughness, compromising metal–semiconductor contact quality. Meanwhile, ion migration associated with these defects degrades dark current stability, limiting carrier transport. To address these issues, we develop a surface reconstruction strategy (SRS) to remove the residual and passivate defects in MAPbBr3SC. As a result, the device achieves a faster response time, which is reduced from 212 to $2~\mu $ s. In addition, the dark current drift is lowered by approximately two orders of magnitude to an ultralow value of ${8}.{86}~\times ~{10} ^{-{7}}$ nA $\cdot $ mm/(V $\cdot $ s), along with a noise current of ${2}.{54}~\times ~{10} ^{-{13}}$ A/Hz ${}^{\text {1/2}}$ . Benefiting from reduced dark current drift, the outstanding photodetectors (PDs) successfully achieve stable signal acquisition and accurate heart rate (HR) monitoring in a photoplethysmography (PPG) system.
基于表面重构的高灵敏度MAPbBr3单晶光电探测器
MAPbBr3单晶(SCs)由于其低缺陷密度和优异的光电性能而备受关注。然而,在基于溶液的SC合成过程中引入的残留溶剂增加了缺陷和表面粗糙度,影响了金属半导体接触质量。同时,与这些缺陷相关的离子迁移降低了暗电流的稳定性,限制了载流子的输运。为了解决这些问题,我们开发了一种表面重建策略(SRS)来去除MAPbBr3SC中的残留和钝化缺陷。因此,该器件实现了更快的响应时间,从212美元降低到$2~ $ $ s。此外,暗电流漂移降低了大约两个数量级,达到${8}的超低值。{86}~\times ~{10} ^{-{7}}$ nA $\cdot $ mm/(V $\cdot $ s),噪声电流为${2}。{54} ~ ~{10} \倍^ {- {13}}$ A / Hz ${} ^{\文本{1/2}}$。受益于减少暗电流漂移,优秀的光电探测器(pd)成功地实现了稳定的信号采集和准确的心率(HR)监测在光电体积脉搏描记(PPG)系统。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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