On the Study of Dynamic Power Dissipation and Switching Speed of Inkjet-Printed RF MoS2 Nonvolatile Switches for Wireless IoT Applications

IF 3.6 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices Pub Date : 2026-09-01 Epub Date: 2026-08-11 DOI:10.1109/TED.2026.3716695
Zirui Zhang;Zixing Peng;Xiaoyu Xiao;Xianyue Liao;Xiaobang Shang;Cinzia Casiraghi;Zhirun Hu
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引用次数: 0

Abstract

The ever-growing deployment of the Internet of Things (IoT) requires the development of electric switches that combine rapid switching time with low power consumption to enhance device performance and energy efficiency. This work explores the use of inkjet-printed nonvolatile switches, made from a 2-D material ink based on molybdenum disulfide (MoS2), for radio frequency (RF) applications. Nonvolatile switches are notable for their zero-static power capability, enabling state retention without a continuous power supply. We have conducted real-time measurements of the inkjet-printed MoS2 nonvolatile switches during both switching-on and switching-off states and analyzed their dynamic behavior across various applied voltages. Our findings reveal that, at an on/off resistance ratio of $10{^{{6}}}$ , switching on the devices can be less than 51 ns, and the energy dissipated can be as low as 1.11 nJ. In contrast, the fastest switching-off time is 147 ns, with the lowest energy expenditure of 61.2 nJ, highlighting the potential of MoS2 nonvolatile switches to significantly enhance energy efficiency. Furthermore, it is found that, unlike conventional semiconductor diodes and transistors, the switching-on and switching-off times depend on the applied voltages; the higher the voltage, the faster the switching process, underlining the dynamic property of inkjet-printed MoS2 switches.
无线物联网应用中喷墨打印射频MoS2非易失性开关的动态功耗和开关速度研究
随着物联网(IoT)部署的不断增长,需要开发结合快速开关时间和低功耗的电子交换机,以提高设备性能和能源效率。这项工作探索了喷墨印刷非易失性开关的使用,该开关由基于二硫化钼(MoS2)的二维材料墨水制成,用于射频(RF)应用。非易失性开关以其零静态功率能力而闻名,可以在没有连续电源的情况下保持状态。我们对喷墨打印的MoS2非易失性开关在开、关两种状态下进行了实时测量,并分析了它们在不同外加电压下的动态行为。我们的研究结果表明,当通断电阻比为$10{^{{6}}}$时,器件的开关可以小于51 ns,耗散的能量可以低至1.11 nJ。相比之下,最快的关断时间为147 ns,最低的能量消耗为61.2 nJ,突出了MoS2非易失性开关显著提高能效的潜力。此外,还发现,与传统的半导体二极管和晶体管不同,开关时间取决于施加的电压;电压越高,开关过程越快,强调了喷墨打印MoS2开关的动态特性。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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