A Unified Model for MoS2 FETs Transfer Characteristic Based on Cubic Bezier Curves

Abstract

This article presents a unified compact model for the transfer characteristics of MoS2 field-effect transistors (FETs) based on cubic Bezier curves. The model is constructed by combining an area-gap criterion with a physics-based endpoint-reconstruction method. The area-gap criterion is used to determine the fitting window and the minimum polynomial order required for accurate representation, while the endpoint-reconstruction method maps physics-based endpoint current and derivative constraints into Bezier control points, thereby yielding a unified analytical expression. Key effects, including interface traps, drain-induced barrier lowering (DIBL), mobility degradation, and velocity saturation, are incorporated through endpoint constraints. The proposed model is explicit, nonpiecewise, and continuously differentiable from deep subthreshold to strong inversion. Validation results show good agreement with measured transfer characteristics under different device dimensions and bias conditions while accurately reproducing transconductance and higher order derivative behavior. The proposed model is therefore suitable for parameter extraction and circuit simulation of MoS2 FETs.