Analysis of Trap-Induced Dynamic Degradation in AlGaN/GaN Gated-Edge Termination Schottky Barrier Diodes Under Continuous Switching Operation

IF 3.6 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2026-09-01 Epub Date: 2026-08-06 DOI:10.1109/TED.2026.3714751

Zhen-Hong Huang;Benoit Bakeroot;Olga Syshchyk;Ching-Chia Lee;Yu-Teng Tso;Pei-Jung Wang;Dirk Wellekens;Niels Posthuma;Sheng-Shiuan Yeh;Stefaan Decoutere;Tian-Li Wu

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引用次数: 0

Abstract

This work investigates the dynamic switching characteristics of gated-edge termination (GET) Schottky barrier diodes (SBDs) fabricated on a 200-V GaN-on-SOI platform, with an emphasis on performance under continuous switching conditions. A wafer-level continuous-switching methodology is employed to characterize the dynamic on-resistance and forward voltage under varying switching frequencies (100–300 kHz), duty cycles (30%–70%), off-state switching voltages (up to 200 V), and temperatures (

$25~^{\circ }$

C–

$125~^{\circ }$

C). A capture-emission trapping model is used to extract time constants and explain the observed duty cycle- and temperature-dependent degradation behaviors. Through a systematic comparison of three field-plate configurations, the study reveals that an additional metal field plate effectively mitigates electric field crowding and trap occupation, which suppresses dynamic switching degradation. This work provides critical insights into the physical mechanisms governing degradation in AlGaN/GaN-based power SBDs, aiming to improve their dynamic switching stability.

查看原文本刊更多论文

连续开关操作下AlGaN/GaN栅极端端肖特基势垒二极管阱诱导的动态退化分析

本文研究了在200 v GaN-on-SOI平台上制造的门边终端（GET）肖特基势垒二极管（sbd）的动态开关特性，重点研究了连续开关条件下的性能。采用晶圆级连续开关方法来表征不同开关频率（100-300 kHz）、占空比（30%-70%）、关断状态开关电压（高达200 V）和温度（$25~^{\circ}$ C - $125~^{\circ}$ C）下的动态导通电阻和正向电压。捕获-排放捕获模型用于提取时间常数，并解释观察到的占空比和温度相关的降解行为。通过对三种场板配置的系统比较，研究表明，额外的金属场板有效地减轻了电场拥挤和陷阱占用，从而抑制了动态开关退化。这项工作为基于AlGaN/ gan的功率sbd控制退化的物理机制提供了重要见解，旨在提高其动态开关稳定性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.