GaN Vertical Trench MOSFET With Gate Trench Recovery Using Stepped-Power Slanted Etching

IF 3.6 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2026-09-01 Epub Date: 2026-07-23 DOI:10.1109/TED.2026.3713111

Dawei Wang;Bingcheng Da;Junzhe Xie;Xianzhi Wei;Shisong Luo;Zonghao Zhang;Yuji Zhao;Houqiang Fu

引用次数: 0

Abstract

In this work, a new easy-to-implement etching damage recovery technique for the trench sidewall in gallium nitride (GaN) vertical trench MOSFETs, named stepped-power slanted reactive ion etching (SP-SRIE), was proposed. The device with SP-SRIE treatment shows improved channel properties and electrical characteristics compared with those without treatment due to the recovered etched gate trench surfaces. A channel mobility of 49 cm2/V

$\cdot $

s, a breakdown voltage of 478 V, and an on-resistance of 1.88 m

$\Omega ~\cdot $

cm2 were achieved. This work provides an effective alternative route for the future development of high-performance vertical GaN power trench MOSFETs.

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采用阶梯功率倾斜蚀刻的栅极恢复GaN垂直沟槽MOSFET

本文提出了一种易于实现的氮化镓（GaN）垂直沟槽mosfet沟槽侧壁刻蚀损伤修复新技术——阶梯功率倾斜反应离子刻蚀（SP-SRIE）。与未处理的器件相比，经过SP-SRIE处理的器件由于恢复了蚀刻栅极沟槽表面而表现出更好的沟道性能和电特性。通道迁移率为49 cm2/V $\cdot $ s，击穿电压为478 V，导通电阻为188 m $\Omega ~\cdot $ cm2。这项工作为未来高性能垂直GaN功率沟槽mosfet的发展提供了一条有效的替代途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.