Improved Interface Quality in β-Ga2O3 MOSFETs With a Crystalline (AlGa)2O3Cap

IF 3.6 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2026-09-01 Epub Date: 2026-08-04 DOI:10.1109/TED.2026.3716668

Xiaole Jia;Shuqi Huang;Yibo Wang;Bochang Li;Cizhe Fang;Haodong Hu;Zhengdong Luo;Yan Liu;Yue Hao;Genquan Han

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引用次数: 0

Abstract

This work demonstrates

$\beta $

-Ga2O3 metal-oxide-semiconductor (MOS) devices with a crystalline (AlGa)2O3 cap formed by thin Al2O3 predeposition and postdeposition annealing (PDA). The cap effectively passivates interface defects and improves the overall gate-stack quality. Compared with control devices, the capped

$\beta $

-Ga2O3 MOS field-effect transistors (MOSFETs) show reduced hysteresis, improved subthreshold swing, enhanced current density, lower off-state leakage, and improved breakdown, yielding a 42.7% enhancement in power figure of merit (PFOM). Reduced threshold-voltage shift under positive gate-bias stress further confirms suppressed electron trapping, highlighting crystalline (AlGa)2O3 cap engineering as an effective approach for improving

$\beta $

-Ga2O3 MOS interface quality and device performance.

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用（AlGa）2O3Cap改善β-Ga2O3 mosfet的界面质量

这项工作展示了$\beta $ -Ga2O3金属氧化物半导体（MOS）器件，其晶体（AlGa）2O3帽由薄Al2O3预沉积和沉积后退火（PDA）形成。帽有效地钝化了界面缺陷，提高了栅极堆的整体质量。与控制器件相比，封盖的$\beta $ -Ga2O3 MOS场效应晶体管（mosfet）表现出更低的迟滞、改进的亚阈值摆幅、增强的电流密度、更低的失态泄漏和改进的击穿，功率性能图（PFOM）提高了42.7%。正栅极偏置应力下阈值电压位移的降低进一步证实了抑制电子捕获，突出了晶体（AlGa）2O3帽工程是提高$\beta $ -Ga2O3 MOS接口质量和器件性能的有效方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.