Sn Quasi-δ-Doped ε-(Al0.22Ga0.78)2O3/α-Ga2O3 MOS-HFET Exceeding 3-kV Breakdown Voltage

IF 3.6 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2026-09-01 Epub Date: 2026-07-09 DOI:10.1109/TED.2026.3709701

Han-Yin Liu;Nei-En Chiu;Jia-Zhe Wu;Yu-Jie Ge;Chun-Chien Lo;Ko-Fan Hu

{"title":"Sn Quasi-δ-Doped ε-(Al0.22Ga0.78)2O3/α-Ga2O3 MOS-HFET Exceeding 3-kV Breakdown Voltage","authors":"Han-Yin Liu;Nei-En Chiu;Jia-Zhe Wu;Yu-Jie Ge;Chun-Chien Lo;Ko-Fan Hu","doi":"10.1109/TED.2026.3709701","DOIUrl":null,"url":null,"abstract":"The Sn quasi-<inline-formula> <tex-math>$\\delta $ </tex-math></inline-formula>-doped <inline-formula> <tex-math>$\\varepsilon $ </tex-math></inline-formula>-(Al<inline-formula> <tex-math>${}_{{0}.{22}}$ </tex-math></inline-formula>Ga<inline-formula> <tex-math>${}_{{0}.{78}}\\text {)}_{{2}}$ </tex-math></inline-formula>O3/<inline-formula> <tex-math>$\\alpha $ </tex-math></inline-formula>-Ga2O3 heterostructure was successfully grown by mist chemical vapor deposition, enabling simultaneous polytype and bandgap engineering in Ga2O3 devices. The heterostructure has a high sheet electron density of <inline-formula> <tex-math>$\\text {9. 4} \\times {10}^{{12}}$ </tex-math></inline-formula> cm<inline-formula> <tex-math>${}^{-{2}}$ </tex-math></inline-formula>, which directly serves as the channel of a metal–oxide–semiconductor heterostructure field-effect transistor (MOS-HFET). The fabricated device exhibits a low specific <sc>on</small>-resistance of 64.6 m<inline-formula> <tex-math>$\\Omega \\cdot $ </tex-math></inline-formula>cm2 together with a high breakdown voltage exceeding 3 kV, resulting in a power figure of merit surpassing 139 MW/cm2. To the best of our knowledge, this work demonstrates for the first time a Ga2O3-based MOS-HFET that integrates polytype and bandgap engineering, offering a promising pathway toward high-voltage power electronics.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"73 9","pages":"5729-5735"},"PeriodicalIF":3.6000,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11600987/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2026/7/9 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

The Sn quasi-

$\delta $

-doped

$\varepsilon $

-(Al

${}_{{0}.{22}}$

${}_{{0}.{78}}\text {)}_{{2}}$

O3/

$\alpha $

-Ga2O3 heterostructure was successfully grown by mist chemical vapor deposition, enabling simultaneous polytype and bandgap engineering in Ga2O3 devices. The heterostructure has a high sheet electron density of

$\text {9. 4} \times {10}^{{12}}$

${}^{-{2}}$

, which directly serves as the channel of a metal–oxide–semiconductor heterostructure field-effect transistor (MOS-HFET). The fabricated device exhibits a low specific on-resistance of 64.6 m

$\Omega \cdot $

cm2 together with a high breakdown voltage exceeding 3 kV, resulting in a power figure of merit surpassing 139 MW/cm2. To the best of our knowledge, this work demonstrates for the first time a Ga2O3-based MOS-HFET that integrates polytype and bandgap engineering, offering a promising pathway toward high-voltage power electronics.

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Sn准δ掺杂ε-(Al0.22Ga0.78)2O3/α-Ga2O3 MOS-HFET超过3kv击穿电压

采用雾状化学气相沉积方法成功制备了Sn准$\delta $掺杂$\varepsilon $ -(Al - ${}_{{0}.{22}}$ Ga ${}_{{0}.{78}}\text {)}_{{2}}$ O3/ $\alpha $ -Ga2O3异质结构，实现了Ga2O3器件的多晶化和带隙工程。该异质结构具有极高的片电子密度（$\text {9. 4} \times {10}^{{12}}$ cm ${}^{-{2}}$），可直接作为金属氧化物半导体异质结构场效应晶体管（MOS-HFET）的通道。该器件具有64.6 m $\Omega \cdot $ cm2的低导通电阻和超过3kv的高击穿电压，其功率值超过139 MW/cm2。据我们所知，这项工作首次展示了一种基于ga2o3的MOS-HFET，它集成了多型和带隙工程，为高压电力电子提供了一条有前途的途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.