Analysis and Suppression of Asymmetric Mode Competition in a Ka-Band Transit Time Oscillator

IF 3.6 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2026-09-01 Epub Date: 2026-07-22 DOI:10.1109/TED.2026.3709794

Zengyao Lei;Jin Meng;Bingfang Deng;Chaochao Yang;Haitao Wang

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Abstract

As high-power microwave (HPM) field is advancing toward higher power and frequencies, asymmetric mode competition emerges as a critical issue that cannot be overlooked, demanding focused consideration in asymmetric mode suppression strategies. The evident asymmetric mode competition was observed in the experiment of the Ka-band transit time oscillator (TTO) in accordance with PIC simulation. It is confirmed that the asymmetric mode is TM₁₁₂ after analyzing the electric field distribution and resonance curve of cold cavity tests. The causes of mode competition were precisely identified as the highly similar high-frequency characteristics between the TM₀₁ and TM₁₁ modes, including the external quality factor

${Q}_{\text {e}}$

and electron conductivity. The perspectives of mode excitation and microwave output were adopted to resolve the issue. By optimizing the reflector and collector, the positive feedback and output capability of the operating mode TM₀₁ are enhanced superior to TM₁₁, thereby achieving suppression. This approach was validated by both simulation and experimental results. As the magnetic field from the permanent magnet was 0.6 T and the diode voltage was 489 kV, the HPM with an output power of 358 MW and a pulsewidth of 14 ns was achieved.

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ka波段过境时间振荡器的非对称模式竞争分析与抑制

随着高功率微波（HPM）领域向高功率、高频率方向发展，非对称模式竞争成为不可忽视的关键问题，需要在非对称模式抑制策略中重点考虑。根据PIC仿真，在ka波段过境时间振荡器（TTO）的实验中观察到明显的非对称模式竞争。通过分析冷腔试验的电场分布和共振曲线，确定非对称模式为TM112。模式竞争的原因精确地确定为TM01和TM11模式之间高度相似的高频特性，包括外部质量因子${Q}_{\text {e}}$和电子电导率。从模式激发和微波输出的角度来解决这一问题。通过优化反射器和集电极，增强工作模式TM01的正反馈和输出能力，优于TM11，从而实现抑制。仿真和实验结果验证了该方法的有效性。在永磁磁场为0.6 T、二极管电压为489 kV的条件下，实现了输出功率为358 MW、脉宽为14 ns的HPM。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.