Floating-Gate IGZO Thin-Film Transistor Employing Split-Gate to Enable Tunable Subthreshold Swing for AMOLED Pixel Circuits

IF 3.6 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2026-09-01 Epub Date: 2026-08-17 DOI:10.1109/TED.2026.3720488

Sunyeol Bae;Hyung-Jun Noh;Yumin Yun;Chae-Hwan Park;Junhyeong Park;Soo-Yeon Lee

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引用次数: 0

Abstract

Precise subthreshold current control is required for low-gray expression in active-matrix organic light-emitting diode (AMOLED) displays. However, steep subthreshold swings (SSs) are sensitive to voltage fluctuations, limiting the resolution of low-gray expression. We propose a floating-gate indium–gallium–zinc–oxide (IGZO) thin-film transistor (TFT) incorporating a split-gate, enabling geometrically tunable SS through layout engineering. The overlap length (L

${}_{\text {ov}}\text {)}$

between the driving gate (DG) and floating gate (FG) controls the gate coupling ratio (GCR), achieving a wide SS tunability ranging from 94 mV/dec to 1.08 V/dec, governed by a capacitive coupling model and TCAD simulations. Furthermore, the auxiliary bias gate (BG) enables independent threshold voltage (

${V} _{\text {th}}\text {)}$

tuning, offering additional operational flexibility. Circuit simulations of a 2T1C OLED pixel confirm that a high SS significantly expands the data voltage window from 1.5 to 8 V, enhancing robustness for voltage deviation and gray-scale precision.

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采用分栅实现AMOLED像素电路可调亚阈值摆幅的浮栅IGZO薄膜晶体管

主动矩阵有机发光二极管（AMOLED）显示器需要精确的亚阈值电流控制来实现低灰度表达。然而，陡峭的阈下波动（SSs）对电压波动敏感，限制了低灰度表达的分辨率。我们提出了一种包含分栅的浮栅铟镓锌氧化物（IGZO）薄膜晶体管（TFT），通过布局工程实现几何可调谐SS。驱动栅极（DG）和浮动栅极（FG）之间的重叠长度（L ${}_{\text {ov}}}\text{）}$控制栅极耦合比（GCR），通过电容耦合模型和TCAD仿真实现从94 mV/dec到1.08 V/dec的宽SS可调谐。此外，辅助偏置门（BG）实现独立阈值电压（${V} _{\text {th}}\text{）}$调谐，提供额外的操作灵活性。2T1C OLED像素的电路仿真证实，高SS将数据电压窗口从1.5 V扩展到8 V，增强了对电压偏差和灰度精度的鲁棒性。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.