Ultralow-Leakage Vertical Al0.51Ga0.49N Trench MOS Barrier Schottky Diodes

IF 3.6 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2026-09-01 Epub Date: 2026-08-17 DOI:10.1109/TED.2026.3712712

Shuhui Zhang;Hang Chen;Xiaoping Meng;Yuchuan Ma;Tianpeng Yang;Tingting Mi;Xiaowen Wang;Chao Liu

引用次数: 0

Abstract

We report vertical Al0.51Ga0.49N trench metal-oxide-semiconductor (MOS) barrier Schottky (TMBS) diodes with ultralow reverse leakage current. With the trench MOS structure effectively shielding the Schottky interface from high electric fields and suppressing the image-force-induced Schottky barrier lowering (SBL) effect, the fabricated TMBS diodes maintain ultralow reverse leakage current density below

$10~\mu $

A/cm2 up to 708 V. Furthermore, the vertical Al0.51Ga0.49N TMBS diodes feature excellent forward rectification characteristics, including a high

$I_{\text {on}}$

$I_{\text {off}}$

ratio of ~109, a low turn-on voltage of 2.3 V, and an ideality factor of 1.98. These results underscore the remarkable potential of vertical AlGaN power diodes for next-generation high-voltage and high-power applications.

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超低漏Al0.51Ga0.49N沟槽MOS势垒肖特基二极管

我们报道了具有超低反向漏电流的垂直Al0.51Ga0.49N沟槽金属氧化物半导体（MOS）势垒肖特基（TMBS）二极管。由于沟槽MOS结构有效地屏蔽了高电场对肖特基界面的影响，抑制了像力引起的肖特基势垒降低（SBL）效应，所制备的TMBS二极管在高达708 V的情况下保持了低于10~\mu $ A/cm2的超低反漏电流密度。此外，垂直Al0.51Ga0.49N TMBS二极管具有优异的正向整流特性，包括高$I_{\text {on}}$ / $I_{\text {off}}$比值为~109，低导通电压为2.3 V，理想因数为1.98。这些结果强调了垂直AlGaN功率二极管在下一代高压和高功率应用中的巨大潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.