A C-Band Relativistic Magnetron With a Slotted Circular Waveguide Extraction Structure

IF 3.6 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Electron Devices Pub Date : 2026-08-01 Epub Date: 2026-07-08 DOI:10.1109/TED.2026.3707139
Zijun Huang;Tingxu Chen;Yanlin Deng;Fan Zhang;Bo Zhao;Biao Hu;Haiyang Wang;Hao Li;Tianming Li
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引用次数: 0

Abstract

As the overall design of the relativistic magnetron (RM) tends toward compactness, improving the power capacity is of great importance. This article proposes a novel all-cavity extraction $C$ -band RM with a slotted circular waveguide extraction (SCWE) structure. While maintaining a compact external footprint, the proposed RM achieves a larger internal interaction space. This improves the power capacity and enhances the performance of the RM. In the experiment, under 380-kV voltage and 0.27 T, the output microwave power reaches 348 MW with a frequency of 5.66 GHz. Moreover, in repeated experiments, the RM outputs stable microwave signals with excellent performance. This study verifies the feasibility of the SCWE structure and provides a new approach for improving the power capacity of the RM.
带开槽圆波导提取结构的c波段相对论磁控管
由于相对论磁控管的总体设计趋向于紧凑化,因此提高功率容量具有重要意义。本文提出了一种新颖的全腔提取的C波段调制解调器,它具有开槽圆波导提取(SCWE)结构。在保持紧凑的外部空间的同时,提议的RM实现了更大的内部交互空间。这样可以提高RM的功率容量和性能。实验中,在380 kv电压和0.27 T下,输出微波功率达到348 MW,频率为5.66 GHz。并且,在反复实验中,RM输出的微波信号稳定,性能优异。该研究验证了SCWE结构的可行性,为提高RM的功率容量提供了新的途径。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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