Parametric Operator Inference to Simulate the Purging Process in Semiconductor Manufacturing

IF 2.5 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Seunghyon Kang;Hyeonghun Kim;Boris Kramer
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Abstract

This work presents the application of parametric Operator Inference (OpInf)—a nonintrusive reduced-order modeling (ROM) technique that learns a low-dimensional representation of a high-fidelity model—to the numerical model of the purging process in semiconductor manufacturing. Leveraging the data-driven nature of the OpInf framework, we aim to forecast the flow field within a plasma-enhanced chemical vapor deposition (PECVD) chamber using computational fluid dynamics (CFD) simulation data. Our model simplifies the system by excluding plasma dynamics and chemical reactions, while still capturing the key features of the purging flow behavior. The parametric OpInf framework learns nine ROMs based on varying argon mass flow rates at the inlet and different outlet pressures. It then interpolates these ROMs to predict the system’s behavior for 25 parameter combinations, including 16 scenarios that are not seen in training. The parametric OpInf ROMs, trained on 36% of the data and tested on 64%, demonstrate accuracy across the entire parameter domain, with a maximum error of 9.32%. Furthermore, the ROM achieves an approximate 142-fold speedup in online computations compared to the full-order model CFD simulation. These OpInf ROMs may be used for fast and accurate predictions of the purging flow in the PECVD chamber, which could facilitate effective particle contamination control in semiconductor manufacturing.
模拟半导体制造中清洗过程的参数算子推理
本研究将参数算子推理(OpInf)——一种学习高保真模型的低维表示的非侵入式降阶建模(ROM)技术——应用于半导体制造中清洗过程的数值模型。利用OpInf框架的数据驱动特性,我们的目标是利用计算流体动力学(CFD)模拟数据预测等离子体增强化学气相沉积(PECVD)腔室内的流场。我们的模型通过排除等离子体动力学和化学反应来简化系统,同时仍然捕捉到净化流动行为的关键特征。参数化OpInf framework根据不同的进口氩气质量流量和不同的出口压力学习9个rom。然后,它对这些rom进行内插,以预测25个参数组合的系统行为,其中包括16个在训练中没有看到的场景。参数OpInf rom在36%的数据上进行了训练,在64%的数据上进行了测试,在整个参数域显示出准确性,最大误差为9.32%。此外,与全阶模型CFD模拟相比,ROM在在线计算中实现了大约142倍的加速。这些OpInf rom可用于快速准确地预测PECVD腔室中的吹扫流量,这可以促进半导体制造中有效的颗粒污染控制。
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来源期刊
IEEE Transactions on Semiconductor Manufacturing
IEEE Transactions on Semiconductor Manufacturing 工程技术-工程:电子与电气
CiteScore
5.20
自引率
11.10%
发文量
101
审稿时长
3.3 months
期刊介绍: The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.
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