Lithographic Hotspot Detection Based on Dual-Branch Feature Fusion and Attention Augmentation

IF 2.5 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Hui Xu;Yunhong Huo;Guoshuai Wang;Ruijun Ma;Wenjun Wang;Chenlong Zhou;Zhengfeng Huang
{"title":"Lithographic Hotspot Detection Based on Dual-Branch Feature Fusion and Attention Augmentation","authors":"Hui Xu;Yunhong Huo;Guoshuai Wang;Ruijun Ma;Wenjun Wang;Chenlong Zhou;Zhengfeng Huang","doi":"10.1109/TSM.2026.3704426","DOIUrl":null,"url":null,"abstract":"With the rapid development of semiconductor technology and the continuous scaling down of circuit feature sizes, hotspot detection has become an increasingly critical task in the workflow. Although most deep learning models have been widely applied to this task, many still suffer from low accuracy and a high number of false alarms when dealing with class-imbalanced datasets. To address these issues, we propose a deep learning model based on dual-branch feature extraction and attention enhancement. This model consists of two parallel feature extraction branches. The first leverages a MetaDCNeXt architecture to capture spatial structural features of hotspots, while the second employs a multi-DenseConvSE architecture to extract semantic features through dense connections and channel attention. A positional convolutional block attention module is used to fuse the outputs from both branches, suppressing redundant information and emphasizing critical features. Experimental results on the ICCAD 2012 benchmark demonstrate that our model achieves the lowest average number of false alarms and the highest average F1 score, with its overall performance significantly surpassing all compared detectors.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"39 3","pages":"478-486"},"PeriodicalIF":2.5000,"publicationDate":"2026-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Semiconductor Manufacturing","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/11569112/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2026/6/17 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

With the rapid development of semiconductor technology and the continuous scaling down of circuit feature sizes, hotspot detection has become an increasingly critical task in the workflow. Although most deep learning models have been widely applied to this task, many still suffer from low accuracy and a high number of false alarms when dealing with class-imbalanced datasets. To address these issues, we propose a deep learning model based on dual-branch feature extraction and attention enhancement. This model consists of two parallel feature extraction branches. The first leverages a MetaDCNeXt architecture to capture spatial structural features of hotspots, while the second employs a multi-DenseConvSE architecture to extract semantic features through dense connections and channel attention. A positional convolutional block attention module is used to fuse the outputs from both branches, suppressing redundant information and emphasizing critical features. Experimental results on the ICCAD 2012 benchmark demonstrate that our model achieves the lowest average number of false alarms and the highest average F1 score, with its overall performance significantly surpassing all compared detectors.
基于双分支特征融合和注意力增强的光刻热点检测
随着半导体技术的快速发展和电路特征尺寸的不断缩小,热点检测已成为工作流程中越来越重要的任务。尽管大多数深度学习模型已被广泛应用于该任务,但在处理类别不平衡数据集时,许多模型仍然存在准确率低和误报率高的问题。为了解决这些问题,我们提出了一种基于双分支特征提取和注意力增强的深度学习模型。该模型由两个并行的特征提取分支组成。第一种方法利用MetaDCNeXt架构捕获热点的空间结构特征,第二种方法采用multi-DenseConvSE架构通过密集连接和通道关注提取语义特征。使用位置卷积块注意模块融合两个分支的输出,抑制冗余信息并强调关键特征。在ICCAD 2012基准测试上的实验结果表明,我们的模型实现了最低的平均虚警数和最高的平均F1分数,其整体性能显著优于所有比较的检测器。
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来源期刊
IEEE Transactions on Semiconductor Manufacturing
IEEE Transactions on Semiconductor Manufacturing 工程技术-工程:电子与电气
CiteScore
5.20
自引率
11.10%
发文量
101
审稿时长
3.3 months
期刊介绍: The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.
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