Edge Effect Compensation Algorithm for Eddy Current Endpoint Detection System in the CMP Process

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Semiconductor Manufacturing Pub Date : 2026-08-01 Epub Date: 2026-06-22 DOI:10.1109/TSM.2026.3705753

Li Ting;Zhang Kang;Wu Jianwei;Tan Jiubin

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引用次数: 0

Abstract

In the integrated circuit manufacturing process, the wafer profile control in the copper chemical mechanical planarization (Cu CMP) exhibits higher uncertainty compared to oxide chemical mechanical planarization, primarily due to the predominant influence of chemical reactions rather than mechanical friction. Real-time monitoring of copper film thickness using eddy current technology is an effective method for ensuring the accuracy of polishing pressure feedback adjustment system in CMP process. However, the edge effect causes attenuation of the eddy-current signal, distorting the measurement of wafer edge thickness and increasing the risk of residual defects in Cu CMP. The objective of this study is to investigate the mechanism of eddy current edge effect through numerical simulation and online experiments, and propose an optimization methodology applicable in IC manufacturing. The key factors that were evaluated include the coil and ferrite structure, excitation frequency of the eddy current sensor, position of wafer radius, thickness of copper film, and kinematic relationship between sensor and wafer. A compensation coefficient matrix is proposed to optimize measurement distortion caused by the edge effects. The feasibility and accuracy of this method have been verified in the practical application of the Cu CMP process.

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CMP过程中涡流端点检测系统的边缘效应补偿算法

在集成电路制造过程中，铜化学机械平面化（Cu CMP）中的晶圆轮廓控制比氧化物化学机械平面化具有更高的不确定性，主要是由于化学反应而不是机械摩擦的主要影响。利用涡流技术实时监测铜膜厚度是保证CMP工艺抛光压力反馈调节系统精度的有效手段。然而，边缘效应会导致涡流信号的衰减，使晶圆边缘厚度的测量失真，增加了Cu CMP中残留缺陷的风险。本研究通过数值模拟和在线实验研究涡流边缘效应的机理，并提出一种适用于集成电路制造的优化方法。评价的关键因素包括线圈和铁氧体结构、涡流传感器的激励频率、晶圆半径位置、铜膜厚度以及传感器与晶圆的运动关系。提出了一种补偿系数矩阵来优化由边缘效应引起的测量失真。在铜CMP工艺的实际应用中，验证了该方法的可行性和准确性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Semiconductor Manufacturing 工程技术-工程：电子与电气

CiteScore

5.20

自引率

11.10%

发文量

101

审稿时长

3.3 months

期刊介绍： The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.