Current Status of Bulk β-Ga₂O₃ and β-(AlxGa₁-ₓ)₂O₃ Crystal Growth

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Semiconductor Manufacturing Pub Date : 2025-11-01 Epub Date: 2025-08-28 DOI:10.1109/TSM.2025.3603605

Zbigniew Galazka

引用次数: 0

Abstract

$\beta $

-Ga2O3 and its solid solutions

$\beta $

-(AlxGa

${}_{\text {1-x}}$

)2O3 are considered as potential candidate materials for next generation power devices due to their ultra-wide bandgaps (4.85–5.6 eV) and large breakdown electric field (

$\geq 8$

MVcm

${}^{\text {-1}}$

). Wafers prepared from bulk crystals constitute a foundation in a device fabrication chain. The present report briefly discusses thermodynamics, challenges in growing bulk crystals from the melt by different methods, which enable at least 2-inch diameter wafers, crystal structural quality, electrical properties, and factors affecting crystal growth costs.

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β-（AlxGa₁-ₓ）₂O₃晶体生长的现状

$\beta $ - ga2o3及其固溶体$\beta $ -(AlxGa ${}_{\text {1-x}}$)2O3由于其超宽带隙（4.85-5.6 eV）和大击穿电场（$\geq 8$ MVcm ${}^{\text {-1}}$）被认为是下一代功率器件的潜在候选材料。由大块晶体制备的晶圆构成了器件制造链的基础。本报告简要讨论了热力学，用不同的方法从熔体中生长大块晶体的挑战，使晶圆直径至少为2英寸，晶体结构质量，电学性能以及影响晶体生长成本的因素。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Semiconductor Manufacturing 工程技术-工程：电子与电气

CiteScore

5.20

自引率

11.10%

发文量

101

审稿时长

3.3 months

期刊介绍： The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.