Robust single-electron memory with quantum states manipulation

IF 47.3 1区综合性期刊 Q1 MULTIDISCIPLINARY SCIENCES

Science Pub Date : 2026-07-16 DOI:10.1126/science.aeg6638

Chunsen Liu, Yutong Xiang, Chong Wang, Peng Zhou

引用次数: 0

Abstract

The ultimate goal of information storage is single-electron memory. Quantum mechanics predicts that two distinguishable quantum states can be realized by confining a single electron within an ultrasmall space. However, scaling down such devices paradoxically amplifies fringe capacitance effects, which hinders the experimental observation of single-electron memory. We report a two-dimensional single-electron memory device based on a coplanar drain-channel-source structure that suppressed fringe capacitance, exhibiting a nonvolatile threshold voltage shift of 0.5 volts after the change of a single electron. Two intriguing quantum behaviors have also been verified regarding the programming voltage. Additionally, we have predicted and observed a distinctive quantum memory effect: A quantum state is cut off by density of states scissors.

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具有量子态操纵的鲁棒单电子存储器

信息存储的最终目标是单电子存储器。量子力学预测，两个可区分的量子态可以通过将单个电子限制在一个超小空间内来实现。然而，缩小这种器件的尺寸反而会放大条纹电容效应，从而阻碍了单电子记忆的实验观察。我们报道了一种基于共面漏极-通道-源结构的二维单电子存储器件，该器件抑制了条纹电容，在单个电子变化后显示出0.5伏的非易失性阈值电压偏移。关于编程电压，还验证了两个有趣的量子行为。此外，我们预测并观察到一种独特的量子记忆效应：一个量子态被状态密度剪刀切断。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Science 综合性期刊-综合性期刊

CiteScore

61.10

自引率

0.90%

发文量

审稿时长

2.1 months

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