Saideep Cherukuri;N. V. Kidambi;W. C. Wang;I. Chakraborty;S. Zhang;L. Shamieh;J. B. Steinberg;S. Mukhopadhyay
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引用次数: 0
194.6-TOPS/W流水全电流域混合信号的28纳米CMOS内存计算
混合信号CIM (MS-CIM)面临位元非线性、高频线性差和吞吐量限制等问题。我们提出了一个混合流水线电流域MS-CIM宏,具有位元匹配线性化接口(BMLI)和环路展开逐次逼近细化(SAR) ADC。$256{\,}\times {\,}256$ SRAM阵列具有8位输入,8位权重,峰值吞吐量为10.16-TOPS,计算效率为194.59-TOPS/W,密度为40.46-TOPS/mm2,在300 MHz和620 MHz时RMSE分别为4.3%和5.6%。
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