Low-Stray-Inductance Integrated Press-Pack Technology for Multidie Reversely Switched Dynistor Stacks

Abstract

To address the issues of high stray inductance, large volume, and excessive weight in conventional series-connected reversely switched dynistor (RSD) stack, this study proposes an integrated multidie press-pack technology utilizing RSD bare dies. By optimizing the structural design of the stack and directly press-packing bare dies under mechanical pressure, this technology significantly reduces the stack stray inductance while achieving miniaturization and weight reduction. Based on this approach, a 12-die series-connected integrated press-pack RSD stack was designed and manufactured. The stack exhibits an overall voltage withstand capability suitable for high-voltage applications and has been experimentally verified to conduct a 10-kA pulse current. Key performance tests demonstrate that the stack stray inductance is only 280 nH, representing a 49% reduction compared to a conventional stack composed of nine packaged RSD chips.