A Logic-Compatible 2-Transistor Embedded Bipolar RRAM MACRO: A 28-nm Multiple-Time Programmable (MTP) Memory Without Extra Masks

IF 2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE

IEEE Solid-State Circuits Letters Pub Date : 2026-01-01 Epub Date: 2026-03-18 DOI:10.1109/LSSC.2026.3675063

Yi Xiang Huang;Y. S. Lin;P. S. Huang;E. Ray Hsieh

引用次数: 0

Abstract

This letter presents a 2-transistor (2T) bipolar embedded resistive RAM (eRRAM) MACRO fabricated in a 28-nm high-k metal gate (HKMG) process for multitime programmable (MTP) applications. To overcome the scaling bottlenecks of traditional embedded Flash, this work utilizes an extra-mask-free, pure front-end-of-line (FEOL) integration, offering a robust solution for automotive and industrial SoCs at and beyond the 28-nm node. The unit cell architecture, read/write operations, and a low-power sense amplifier design are characterized. Experimental results for a 2-kb MACRO demonstrate 1000-cycle endurance with a sensing window over three-folds and data retention surpassing 1000 h at

$150~^{\circ }$

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一个逻辑兼容的2晶体管嵌入式双极RRAM宏：一个28纳米多时间可编程（MTP）存储器没有额外的掩模

这封信介绍了一个2晶体管（2T）双极嵌入式电阻RAM (eRRAM) MACRO，采用28纳米高k金属栅极（HKMG）工艺制造，用于多时间可编程（MTP）应用。为了克服传统嵌入式闪存的扩展瓶颈，这项工作利用了一个额外的无掩模，纯前端线（FEOL）集成，为28纳米及以上节点的汽车和工业soc提供了一个强大的解决方案。该器件的结构、读/写操作和低功耗感测放大器的设计具有一定的特点。实验结果表明，在$150~^{\circ}$ C下，2 kb MACRO具有超过三倍的感知窗口和超过1000小时的数据保留时间。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering

CiteScore

4.30

自引率

3.70%

发文量