RAPID: Re-Configurable Adder Tree Based Performance-Incentivized AI Digital CIM Macro

IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
IEEE Transactions on Nanotechnology Pub Date : 2026-01-01 Epub Date: 2026-04-01 DOI:10.1109/TNANO.2026.3680063
Akash Sankhe;Mukul Lokhande;Narendra Singh Dhakad;Radheshyam Sharma;Santosh Kumar Vishvakarma
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引用次数: 0

Abstract

Rapidly rising AI applications have driven the need for energy-efficient, high-throughput SRAM-embedded Compute-in-Memory (CIM) macros. This article proposes RAPID-CIM, a reconfigurable digital CIM featuring an M8T bitcell and an area-efficient hierarchical adder tree, which addresses performance limitations in state-of-the-art (SoTA) designs. The proposed architecture achieves a maximum $16.7\times$ improvement in energy efficiency and an $8.6\times$ increase in compute density compared to SoTA designs at CMOS 65nm. RAPID-CIM achieves superior performance for diverse AI workloads with scalable bit-precision and sparsity-aware operations, reducing up to $3.2\times$ operation cycles and a 30% memory bank usage and application accuracy within 97.85% Quality of Results (QoR). Thus, the proposed solution is a well-versed optimisation for resource-constrained Edge-AI platforms.
基于性能激励的AI数字CIM宏的可重构加法器树
快速增长的人工智能应用推动了对节能、高吞吐量sram嵌入式内存中计算(CIM)宏的需求。本文提出了RAPID-CIM,这是一种可重构的数字CIM,具有M8T位单元和面积高效的分层加法器树,它解决了最先进(SoTA)设计中的性能限制。与CMOS 65nm的SoTA设计相比,所提出的架构实现了最大16.7美元的能效提升和8.6美元的计算密度提升。RAPID-CIM通过可扩展的位精度和sparse -aware操作,为不同的AI工作负载实现了卓越的性能,减少了高达3.2倍的操作周期,在97.85%的结果质量(QoR)内减少了30%的内存库使用和应用精度。因此,提出的解决方案是对资源受限的边缘人工智能平台的精通优化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology 工程技术-材料科学:综合
CiteScore
4.80
自引率
8.30%
发文量
74
审稿时长
8.3 months
期刊介绍: The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.
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