Thin Superconducting Films as Reflectors for High-$Q$ Terahertz Fabry–Pérot Resonators

IF 3.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
A. Terentiev;A. Melentev;A. G. Shishkin;M. S. Sidelnikov;Z. V. Gagkaeva;V. S. Stolyarov;B. P. Gorshunov;E. S. Zhukova
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引用次数: 0

Abstract

In this article, we fabricate Fabry–Pérot resonators by depositing superconducting Mo$_{0.6}$Re$_{0.4}$ films with thicknesses of 10, 20, and 30 nm (critical temperatures $T_{c} = 6.7$, 7.4, and 7.7 K, respectively) on both sides of plane-parallel slabs of highly resistive silicon. Using time-domain and coherent source spectroscopy, we determine the terahertz spectra of the complex ac conductivity and dielectric permittivity of the films from the measured transmission coefficient spectra of the resonators in the range of 3–50 cm$^{-1}$ (90 GHz to 1.5 THz) at temperatures of 2.5–300 K. The obtained frequency and temperature dependences of the conductivity and permittivity spectra are well described by the Bardeen–Cooper–Schrieffer (BCS) theory within single-gap approximation. We extract and analyze the temperature dependencies of the superconducting energy gap, the London penetration depth, and the superconducting condensate plasma frequency. The ratio $2\Delta (0)/k_{B} T_{c} \approx 4.05$ is found to be slightly higher than the BCS weak-coupling value of 3.52, indicating a moderately strong coupling regime in the studied Mo$_{0.6}$Re$_{0.4}$ films. The critical temperature $T_{c}$ and the zero-temperature superconducting energy gap $2\Delta (0)$ are found to decrease with decreasing film thickness, a behavior that is associated with the reduction of the superconducting order parameter due to the contribution of surface states to the free energy. The dramatic increase in the reflectivity of the Mo$_{0.6}$Re$_{0.4}$ films and drop in losses in the superconducting state lead to a significant improvement in the performance of the Fabry–Pérot resonators, expressed in the enhanced quality factor $Q$ and the finesse $F$ of the interferometric resonances. For example, at $T = 2.5$ K, the resonator with the 30-nm-thick films exhibits $Q = 830$ (resonances at 5.8 and 8.8 cm$^{-1}$) and $F = 580$ (resonance at $\approx 3$ cm$^{-1}$; full width at half maximum $= 0.005$ cm$^{-1}$, or 150 MHz). Due to its compactness, simple design, and high quality, the resonator is a promising candidate for applications in modern terahertz technology.
超导体薄膜作为高Q太赫兹法布里-普氏谐振器的反射器
在本文中,我们通过在平面平行的高阻硅板两侧沉积厚度分别为10,20和30nm(临界温度分别为$T_{c} = 6.7$, 7.4和7.7 K)的超导Mo $_{0.6}$ Re $_{0.4}$膜来制造fabry - prot谐振器。利用时域和相干源光谱,我们从测量到的3-50 cm $^{-1}$ (90 GHz至1.5 THz)范围内谐振器的透射系数光谱中确定了薄膜的复交流电导率和介电常数的太赫兹光谱,温度为2.5-300 K。所得到的电导率和介电常数谱的频率和温度依赖关系可以用单间隙近似的Bardeen-Cooper-Schrieffer (BCS)理论很好地描述。我们提取并分析了超导能隙、伦敦穿透深度和超导凝聚等离子体频率的温度依赖关系。比值$2\Delta (0)/k_{B} T_{c} \approx 4.05$略高于BCS弱耦合值3.52,表明所研究的Mo $_{0.6}$ Re $_{0.4}$薄膜具有中等强耦合状态。临界温度$T_{c}$和零温度超导能隙$2\Delta (0)$随着薄膜厚度的减小而减小,这与表面态对自由能的贡献导致超导序参量的减小有关。Mo $_{0.6}$ Re $_{0.4}$薄膜反射率的急剧增加和超导态损耗的下降导致法布里-帕姆罗特谐振器性能的显著改善,表现为干涉共振的质量因子$Q$的增强和精细度$F$的提高。例如,在$T = 2.5$ K处,具有30 nm厚薄膜的谐振器显示$Q = 830$(共振在5.8和8.8 cm $^{-1}$)和$F = 580$(共振在$\approx 3$ cm $^{-1}$;全宽在一半$= 0.005$ cm $^{-1}$,或150 MHz)。由于其结构紧凑,设计简单,质量高,该谐振器在现代太赫兹技术中有很好的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Transactions on Terahertz Science and Technology
IEEE Transactions on Terahertz Science and Technology ENGINEERING, ELECTRICAL & ELECTRONIC-OPTICS
CiteScore
7.10
自引率
9.40%
发文量
102
期刊介绍: IEEE Transactions on Terahertz Science and Technology focuses on original research on Terahertz theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of Terahertz waves.
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