1550-Nm-Pumped InAs-Based Terahertz Modulator Integrated in a WR1.0 Waveguide

IF 3.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Terahertz Science and Technology Pub Date : 2026-04-01 Epub Date: 2026-01-12 DOI:10.1109/TTHZ.2026.3652817

Julien Guise;Hajasoa Ratovo;Fernando Gonzalez-Posada Flores;Pierre Fehlen;Monique Thual;Jean-Claude Simon;Jeffrey Hesler;Theodore Reck;Laurent Cerutti;Jean-Baptiste Rodriguez;Philippe Nouvel;Annick Pénarier;Emmanuel Centeno;Thierry Taliercio;Stéphane Blin

引用次数: 0

Abstract

We present a terahertz intensity modulator optically controlled at 1550 nm and integrated within a standard hollow-core rectangular waveguide operating in the 0.75–1.1 THz frequency range (WR1.0 standard). The relevant figures of merit for the component are presented; including insertion losses below 5 dB, average modulation depth of 70%, and a modulation bandwidth of 15 MHz. An analytical model relating the photogenerated carrier lifetime to the modulator bandwidth is presented.

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集成在WR1.0波导中的1550nm泵浦inas基太赫兹调制器

我们提出了一个光控在1550 nm的太赫兹强度调制器，并集成在一个标准的空心矩形波导中，工作在0.75-1.1太赫兹频率范围内（WR1.0标准）。给出了该部件的相关性能参数；包括插入损耗低于5db，平均调制深度为70%，调制带宽为15mhz。提出了光生载流子寿命与调制器带宽关系的解析模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Terahertz Science and Technology ENGINEERING, ELECTRICAL & ELECTRONIC-OPTICS

CiteScore

7.10

自引率

9.40%

发文量

102

期刊介绍： IEEE Transactions on Terahertz Science and Technology focuses on original research on Terahertz theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of Terahertz waves.