Cryogenic Temperature Electrical Characterization of Enhancement-Mode Thin Barrier AlGaN/GaN HEMT With Hybrid Ferroelectric Charge Trap Gate-Stack

IF 3.2 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2026-04-01 Epub Date: 2026-02-24 DOI:10.1109/TED.2026.3663344

Rahul Rai;Khanh Quoc Nguyen;Viet Quoc Ho;Hung Duy Tran;Baquer Mazhari;Edward Yi Chang

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引用次数: 0

Abstract

This work reports on the fabrication and cryogenic temperature characterization of a high-electron-mobility transistor (HEMT) featuring a 6 nm AlGaN thin barrier and a hybrid ferroelectric gate-stack to achieve E-mode operation. DC and transmission line method (TLM) measurements were performed down to 4 K to investigate the device performance and contact resistance behavior at cryogenic temperatures. We achieved a subthreshold slope (SS) of ~47.5 mV/dec at 4 K, along with a high maximum drain current of 1.055 A/mm at V

${}_{\text {DS}}= {14}$

V (at 20 K) and a remarkably high current on/off ratio (I_on/I_off) of

$6.6\times 10^{{10}}$

at 4 K. The hybrid gate architecture demonstrated stable operation with preserved ferroelectric functionality. Temperature-dependent analysis revealed insights into carrier transport, mobility degradation, sheet, and contact resistivity. These results demonstrate the potential of ferroelectric-gated HEMTs for cryogenic applications.

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具有杂化铁电电荷阱栅极堆的增强模式薄势垒AlGaN/GaN HEMT的低温电特性

本文报道了一种高电子迁移率晶体管（HEMT）的制造和低温特性，该晶体管具有6 nm AlGaN薄势垒和混合铁电栅极堆栈，可实现e模式操作。直流和传输线法（TLM）测量在4 K以下进行，以研究器件在低温下的性能和接触电阻行为。我们在4 K时实现了~47.5 mV/dec的亚阈值斜率（SS），以及在V ${}_{\text {DS}}= {14}$ V （20 K）时高达1.055 a /mm的最大漏极电流，以及在4 K时高达6.6\ × 10^{{10}}$的非常高的电流通/关比（Ion/Ioff）。混合栅极结构运行稳定，并保留了铁电功能。温度依赖分析揭示了载流子输运、迁移率退化、薄片和接触电阻率的见解。这些结果证明了铁电门控hemt在低温应用方面的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.