Room‐Temperature Antiferroelectricity in Titanite (CaTiSiO 5 ) Thin Films

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Weirong Yang, Taro Kuwano, Hiroki Taniguchi, Shintaro Yasui
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引用次数: 0

Abstract

Titanite (CaTiSiO 5 ) has long been considered a promising lead–free antiferroelectric material characterized by the antiparallel displacement of Ti atoms within adjacent 1D oxygen octahedral chains. However, this antiferroelectricity has not been experimentally confirmed in recent decades. In this study, titanite thin films were fabricated on (111)Pt/(100)Si substrates using pulsed laser deposition, achieving applied electric fields up to ∼1200 kV/cm. The antiferroelectric response of the deposited titanite was confirmed through the observation of a double hysteresis loop during polarization–electric field measurements performed at room temperature. Notably, increasing the electric field induced the formation of a ferroelectric phase with a low coercive field (∼20 kV/cm), which was not observed in the bulk titanite. Measurement of the dielectric properties between room temperature and 600 K revealed a Curie temperature of ∼470 K, as indicated by a permittivity anomaly. However, the antiferroelectric response disappeared at ∼440 K, which is below the phase transition temperature. In addition, the titanite thin films demonstrated a modest recoverable energy density (0.3 J/cm 3 at ∼200 kV/cm) high energy storage efficiency (∼89% at ∼200 kV/cm).
二氧化钛(catisio5)薄膜的室温反铁电性
钛矿(catisio5)一直被认为是一种很有前途的无铅反铁电材料,其特点是钛原子在相邻的一维氧八面体链内反平行位移。然而,近几十年来,这种反铁电性还没有得到实验证实。在这项研究中,利用脉冲激光沉积技术在(111)Pt/(100)Si衬底上制备了钛矿薄膜,实现了高达1200 kV/cm的电场。通过在室温下进行的极化电场测量中观察到的双磁滞回线,证实了沉积钛矿的反铁电响应。值得注意的是,增加电场诱导形成具有低矫顽力场(~ 20 kV/cm)的铁电相,这在大块钛中没有观察到。在室温到600 K之间的介电特性测量显示居里温度为~ 470 K,这是由介电常数异常所表明的。然而,反铁电响应在低于相变温度的~ 440 K时消失。此外,钛矿薄膜表现出适度的可回收能量密度(在~ 200 kV/cm时为0.3 J/ cm3)和高能量存储效率(在~ 200 kV/cm时为~ 89%)。
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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