{"title":"Preparation of highly transparent and low resistive indium tin oxide thin film by direct current low-power sputtering","authors":"Xueqi Chen, Manyao Wang, Zongyu Huang, Xiang Qi","doi":"10.1016/j.tsf.2026.140892","DOIUrl":null,"url":null,"abstract":"<div><div>Indium tin oxide (ITO) films were prepared by 15–100 W direct current (DC) magnetron sputtering and then annealed at high temperature. The effect of sputtering power on the structural, optical and electrical properties of the films was systematically investigated. Optical transmittance in the visible range (400–800 nm) decreased from 89% (15 W) to 24% (100 W) due to defect-mediated light scattering, but recovered to >85% after annealing. Electrical measurements indicate that annealing in an argon atmosphere enhances carrier concentration by promoting oxygen desorption, significantly reducing resistivity and yielding superior performance compared to samples annealed in air or vacuum. The optimal sputtering power of 60 W yields a high figure of merit (649 × 10<sup>–4</sup> Ω<sup>-1</sup>) with a balance of low resistivity (7 × 10<sup>–5</sup> Ωcm), low square resistance (6 ± 0.23 Ω/sq), and high transmittance (91%). This study proposes an optimised process route for achieving high-performance ITO thin films. By mitigating target material depletion issues and overcoming traditional high-power limitations, it broadens the process's applicability, holding significant value for industrial implementation.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"837 ","pages":"Article 140892"},"PeriodicalIF":2.4000,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Thin Solid Films","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0040609026000416","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2026/2/14 0:00:00","PubModel":"Epub","JCR":"Q3","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}
引用次数: 0
Abstract
Indium tin oxide (ITO) films were prepared by 15–100 W direct current (DC) magnetron sputtering and then annealed at high temperature. The effect of sputtering power on the structural, optical and electrical properties of the films was systematically investigated. Optical transmittance in the visible range (400–800 nm) decreased from 89% (15 W) to 24% (100 W) due to defect-mediated light scattering, but recovered to >85% after annealing. Electrical measurements indicate that annealing in an argon atmosphere enhances carrier concentration by promoting oxygen desorption, significantly reducing resistivity and yielding superior performance compared to samples annealed in air or vacuum. The optimal sputtering power of 60 W yields a high figure of merit (649 × 10–4 Ω-1) with a balance of low resistivity (7 × 10–5 Ωcm), low square resistance (6 ± 0.23 Ω/sq), and high transmittance (91%). This study proposes an optimised process route for achieving high-performance ITO thin films. By mitigating target material depletion issues and overcoming traditional high-power limitations, it broadens the process's applicability, holding significant value for industrial implementation.
期刊介绍:
Thin Solid Films is an international journal which serves scientists and engineers working in the fields of thin-film synthesis, characterization, and applications. The field of thin films, which can be defined as the confluence of materials science, surface science, and applied physics, has become an identifiable unified discipline of scientific endeavor.