Single-step resistless hardmask fabrication using selective surface oxidation

IF 4.6 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Micro and Nano Engineering Pub Date : 2026-03-01 Epub Date: 2026-02-01 DOI:10.1016/j.mne.2026.100353
S.N. Ghosh, D.D. Sarkar, S. Talukder
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引用次数: 0

Abstract

Electrolithography (ELG) is a unique case of local anodic oxidation (LAO) based lithography. ELG is performed by electrically stressing chromium (Cr) thin films, resulting in the formation of an oxide material which is a liquid material and spreads to over 100 μm within a few seconds. The rate of spread of the oxide domain is proportional to the oxidation current flowing through the circuit. The liquid chromium oxide creates an additional resistance affecting the magnitude of the oxidation current, which in turn affects the repeatability of the formed patterns if the process is not meticulously planned. In an aim to reduce such reliability concerns governing the ELG technique, we propose to alter the electrical nature of the sample underneath the Cr layer, against the conventionally used insulating layers. Despite incorporating non-insulating layers underneath the Cr layer, the results presented in this study indicate that the said oxidation process remains as aggressive as has been reported before and thereby possibly opens up a plethora of direct write applications of the ELG technique. We have proposed and successfully demonstrated one such application of ELG, where it can be used to pattern and electro-etch Cr films to act as hard masks for dry etching.

Abstract Image

采用选择性表面氧化的单步无电阻硬掩膜制造
电光刻(ELG)是一种独特的基于局部阳极氧化(LAO)的光刻技术。ELG是通过对铬(Cr)薄膜施加电应力来实现的,从而形成一种氧化物材料,这种材料是一种液体材料,在几秒钟内扩散到100 μm以上。氧化畴的扩散速率与流过电路的氧化电流成正比。液态氧化铬会产生额外的电阻,影响氧化电流的大小,如果工艺没有精心规划,这反过来又会影响形成图案的可重复性。为了减少这种控制ELG技术的可靠性问题,我们建议改变Cr层下样品的电学性质,而不是传统使用的绝缘层。尽管在Cr层下面加入了非绝缘层,但本研究的结果表明,上述氧化过程仍然像以前报道的那样具有侵略性,因此可能开辟了ELG技术的大量直接写入应用。我们已经提出并成功地展示了ELG的一种应用,它可以用于图案和电蚀刻Cr膜,作为干蚀刻的硬掩模。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Micro and Nano Engineering
Micro and Nano Engineering Engineering-Electrical and Electronic Engineering
CiteScore
3.30
自引率
0.00%
发文量
67
审稿时长
80 days
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